NCE20N50T PDF даташит
Спецификация NCE20N50T изготовлена «NCE Power Semiconductor» и имеет функцию, называемую «N-Channel Super Junction Power MOSFET». |
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Детали детали
Номер произв | NCE20N50T |
Описание | N-Channel Super Junction Power MOSFET |
Производители | NCE Power Semiconductor |
логотип |
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NCE20N50T
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
TVDS@ jmax
RDS(ON)
ID
560
190
20
V
mΩ
A
Application
● Power factor correction(PFC)
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply(UPS)
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE20N50T
TO-247
NCE20N50T
Table 1. Absolute Maximum Ratings (TC=25℃)
Parameter
Drain-Source Voltage (VGS=0V)
Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
Drain Source voltage slope, VDS = 400 V, ID = 20 A, Tj =
125 °C
Maximum Power Dissipation(Tc=25℃)
Derate above 25°C
Single pulse avalanche energy (Note 2)
Avalanche current(Note 1)
Repetitive Avalanche energy ,tAR limited by Tjmax
(Note 1)
Symbol
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
dv/dt
PD
EAS
IAR
EAR
TO-247
NCE20N50T
500
±30
20
12.5
60
50
208
1.67
690
20
1
Unit
V
V
A
A
A
V/ns
W
W/°C
mJ
A
mJ
Wuxi NCE Power Semiconductor Co., Ltd
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NCE20N50T
Parameter
Operating Junction and Storage Temperature Range
* limited by maximum junction temperature
Table 2. Thermal Characteristic
Parameter
Thermal Resistance,Junction-to-Case(Maximum)
Thermal Resistance,Junction-to-Ambient (Maximum)
Symbol
TJ,TSTG
Symbol
RthJC
RthJA
NCE20N50T
-55...+150
NCE20N50T
0.6
62
Unit
°C
Unit
°C /W
°C /W
Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
On/off states
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current(Tc=25℃)
IDSS
VDS=500V,VGS=0V
Zero Gate Voltage Drain Current(Tc=125℃)
IDSS
VDS=500V,VGS=0V
Gate-Body Leakage Current
IGSS VGS=±30V,VDS=0V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=10A
Dynamic Characteristics
Forward Transconductance
gFS VDS = 20V, ID = 10A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=50V,VGS=0V,
F=1.0MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS=400V,ID=20A,
VGS=10V
Qgd
Intrinsic gate resistance
RG f = 1 MHz open drain
Switching times
Turn-on Delay Time
td(on)
Turn-on Rise Time
Turn-Off Delay Time
tr
td(off)
VDD=380V,ID=20A,
RG=3.6Ω,VGS=10V
Turn-Off Fall Time
tf
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Pulsed Source-drain current(Body Diode)
ISD
ISDM
TC=25°C
Forward on voltage
VSD Tj=25°C,ISD=20A,VGS=0V
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr Tj=25°C,IF=20A,di/dt=100A/μs
Peak Reverse Recovery Current
Irrm
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25℃,VDD=50V,VG=10V, RG=25Ω
Min
500
2.5
Typ Max
0.05
3
155
1
100
±100
3.5
190
17.5
2400
180
5.7
59
10
26
0.9
10
5
67 100
4 12
20
60
0.9 1.3
360
5.5
30
Unit
V
μA
μA
nA
V
mΩ
S
pF
pF
pF
nC
nC
nC
Ω
nS
nS
nS
nS
A
A
V
nS
uC
A
Wuxi NCE Power Semiconductor Co., Ltd
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NCE20N50T
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)
Figure1. Safe operating area for NCE20N50T
Figure2. Source-Drain Diode Forward Voltage
Figure3. Output characteristics
Figure4. Transfer characteristics
Figure5. Static drain-source on resistance
Figure6. RDS(ON) vs Junction Temperature
Wuxi NCE Power Semiconductor Co., Ltd
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Номер в каталоге | Описание | Производители |
NCE20N50 | N-Channel Super Junction Power MOSFET | NCE Power Semiconductor |
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NCE20N50T | N-Channel Super Junction Power MOSFET | NCE Power Semiconductor |
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