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NCE11N60F PDF даташит

Спецификация NCE11N60F изготовлена ​​​​«NCE Power Semiconductor» и имеет функцию, называемую «N-Channel Super Junction Power MOSFET».

Детали детали

Номер произв NCE11N60F
Описание N-Channel Super Junction Power MOSFET
Производители NCE Power Semiconductor
логотип NCE Power Semiconductor логотип 

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NCE11N60F Даташит, Описание, Даташиты
NCE11N60D,NCE11N60,NCE11N60F
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
New technology for high voltage device
Low on-resistance and low conduction losses
small package
Ultra Low Gate Charge cause lower driving requirements
100% Avalanche Tested
ROHS compliant
TVDS@ jmax
RDS(ON)
ID
650
380
11
V
m
A
Application
Power factor correctionPFC
Switched mode power supplies(SMPS)
Uninterruptible Power SupplyUPS
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE11N60D
TO-263
NCE11N60D
NCE11N60
TO-220
NCE11N60
NCE11N60F
TO-220F
NCE11N60F
Table 1. Absolute Maximum Ratings (TC=25)
Parameter
Drain-Source Voltage (VGS=0V
Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
Drain Source voltage slope, VDS = 480 V, ID = 11 A, Tj =
125 °C
Maximum Power Dissipation(Tc=25)
Derate above 25°C
Single pulse avalanche energy (Note2)
Avalanche current(Note 1)
Repetitive Avalanche energy tAR limited by Tjmax
(Note 1)
TO-263
TO-220
TO-220F
Symbol
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
NCE11N60D
NCE11N60
NCE11N60F
600
±30
11 11*
7 7*
33 33*
Unit
V
V
A
A
A
dv/dt
50 V/ns
PD 125 33 W
1
0.26
W/°C
EAS 340 mJ
IAR 11 A
EAR 0.6 mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
http://www.ncepower.com
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NCE11N60F Даташит, Описание, Даташиты
NCE11N60D,NCE11N60,NCE11N60F
Parameter
Operating Junction and Storage Temperature Range
* limited by maximum junction temperature
Table 2. Thermal Characteristic
Parameter
Thermal ResistanceJunction-to-CaseMaximum
Thermal ResistanceJunction-to-Ambient Maximum
Symbol
TJ,TSTG
Symbol
RthJC
RthJA
NCE11N60D
NCE11N60
NCE11N60F
-55...+150
Unit
°C
NCE11N60D
NCE11N60
1
62
NCE11N60F
3.8
80
Unit
°C /W
°C /W
Table 3. Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
On/off states
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current(Tc=25)
IDSS
VDS=600V,VGS=0V
Zero Gate Voltage Drain Current(Tc=125)
IDSS
VDS=600V,VGS=0V
Gate-Body Leakage Current
IGSS VGS=±30V,VDS=0V
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=7A
Dynamic Characteristics
Forward Transconductance
gFS VDS = 20V, ID = 7A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Clss
Coss
Crss
VDS=50V,VGS=0V,
F=1.0MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS=480V,ID=11A,
VGS=10V
Intrinsic gate resistance
RG f = 1 MHz open drain
Switching times
Turn-on Delay Time
td(on)
Turn-on Rise Time
Turn-Off Delay Time
tr
td(off)
VDD=380V,ID=11A,
RG=6.8,VGS=10V
Turn-Off Fall Time
tf
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Pulsed Source-drain current(Body Diode)
ISD
ISDM
TC=25°C
Forward On Voltage
VSD Tj=25°C,ISD=11A,VGS=0V
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr Tj=25°C,IF=11A,di/dt=100A/μs
Peak Reverse Recovery Current
Irrm
Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25,VDD=50V,VG=10V, RG=25
Min
600
2.5
Typ Max
0.05
3
340
1
100
±100
3.5
380
8.5
1270
106
5.5
28
6.5
9.5
1.5
60
10
5
44 70
59
11
33
1 1.3
290
3.6
24
Unit
V
μA
μA
nA
V
m
S
pF
pF
pF
nC
nC
nC
nS
nS
nS
nS
A
A
V
nS
uC
A
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
http://www.ncepower.com
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NCE11N60F Даташит, Описание, Даташиты
NCE11N60D,NCE11N60,NCE11N60F
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)
Figure1. Safe operating area
Figure2. Safe operating area for NCE11N60F
Figure3. Source-Drain Diode Forward Voltage
Figure4. Output characteristics
Figure5. Transfer characteristics
Figure6. Static drain-source on resistance
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
http://www.ncepower.com
v1.2










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