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NCE20NF50T PDF даташит

Спецификация NCE20NF50T изготовлена ​​​​«NCE Power Semiconductor» и имеет функцию, называемую «N-Channel Super Junction Power MOSFET».

Детали детали

Номер произв NCE20NF50T
Описание N-Channel Super Junction Power MOSFET
Производители NCE Power Semiconductor
логотип NCE Power Semiconductor логотип 

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NCE20NF50T Даташит, Описание, Даташиты
NCE20NF50T
NCE N-Channel Super Junction Power MOSFET (With Fast Body Diode)
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
New technology for high voltage device
Low on-resistance and low conduction losses
Intrinsic fast-recovery body diode
Extreme low reverse recovery charge
100% Avalanche Tested
ROHS compliant
TVDS@ jmax
RDS(ON)
ID
560
210
20
V
m
A
Application
Power factor correctionPFC
Switched mode power supplies(SMPS)
Uninterruptible Power SupplyUPS
Strongly recommended for bridge topologies
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE20NF50T
TO-247
NCE20NF50T
Table 1. Absolute Maximum Ratings (TC=25)
Parameter
Drain-Source Voltage (VGS=0V
Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
Drain Source voltage slope, VDS = 400 V, ID = 20 A, Tj =
125 °C
Maximum Power Dissipation(Tc=25)
Derate above 25°C
Single pulse avalanche energy (Note 2)
Avalanche current(Note 1)
Repetitive Avalanche energy tAR limited by Tjmax (Note 1)
Symbol
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
dv/dt
PD
EAS
IAR
EAR
TO-247
NCE20NF50T
500
±30
20
12.5
60
50
208
1.67
690
20
1
Unit
V
V
A
A
A
V/ns
W
W/°C
mJ
A
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
http://www.ncepower.com
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NCE20NF50T Даташит, Описание, Даташиты
NCE20NF50T
Parameter
Operating Junction and Storage Temperature Range
* limited by maximum junction temperature
Symbol
TJ,TSTG
NCE20NF50T
-55...+150
Unit
°C
Table 2. Thermal Characteristic
Parameter
Thermal ResistanceJunction-to-CaseMaximum
Thermal ResistanceJunction-to-Ambient Maximum
Symbol
RthJC
RthJA
NCE20NF50T
0.6
62
Unit
°C /W
°C /W
Table 3. Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25)
Zero Gate Voltage Drain Current(Tc=125)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
BVDSS
IDSS
IDSS
IGSS
VGS(th)
RDS(ON)
VGS=0V ID=250μA
VDS=500V,VGS=0V
VDS=500V,VGS=0V
VGS=±30V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=10A
Dynamic Characteristics
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Intrinsic gate resistance
gFS VDS = 20V, ID = 10A
Clss
Coss
Crss
VDS=50V,VGS=0V,
F=1.0MHz
Qg
Qgs
VDS=400V,ID=20A,
VGS=10V
Qgd
RG f = 1 MHz open drain
Switching times
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
tr
td(off)
tf
VDD=380V,ID=20A,
RG=3.6,VGS=10V
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Pulsed Source-drain current(Body Diode)
ISD
ISDM
TC=25°C
Forward on voltage
VSD Tj=25°C,ISD=20A,VGS=0V
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr Tj=25°C,IF=20A,di/dt=100A/μs
Peak reverse recovery current
Irrm
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25,VDD=50V,VG=10V, RG=25
Min
500
3
Typ
180
17.5
2400
180
5.7
59
10
26
0.9
10
5
50
5
0.9
190
1.5
13
Max
1
100
±100
5
210
100
12
20
60
1.3
Unit
V
μA
μA
nA
V
m
S
pF
pF
pF
nC
nC
nC
nS
nS
nS
nS
A
A
V
nS
uC
A
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
http://www.ncepower.com
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NCE20NF50T Даташит, Описание, Даташиты
NCE20NF50T
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)
Figure1. Safe operating area for NCE20NF50T
Figure2. Source-Drain Diode Forward Voltage
Figure3. Output characteristics
Figure4. Transfer characteristics
Figure5. Static drain-source on resistance
Figure6. RDS(ON) vs Junction Temperature
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
http://www.ncepower.com
v1.0










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