NCE20NF60 PDF даташит
Спецификация NCE20NF60 изготовлена «NCE Power Semiconductor» и имеет функцию, называемую «N-Channel Super Junction Power MOSFET». |
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Детали детали
Номер произв | NCE20NF60 |
Описание | N-Channel Super Junction Power MOSFET |
Производители | NCE Power Semiconductor |
логотип |
9 Pages
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NCE20NF60,NCE20NF60F
NCE N-Channel Super Junction Power MOSFET (With Fast Body Diode)
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●Intrinsic fast-recovery body diode
●Extreme low reverse recovery charge
●100% Avalanche Tested
●ROHS compliant
TVDS@ jmax
RDS(ON)
ID
650
210
20
V
mΩ
A
Application
● Power factor correction(PFC)
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply(UPS)
● Strongly recommended for bridge topologies
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE20NF60
TO-220
NCE20NF60
NCE20NF60F
TO-220F
NCE20NF60F
Table 1. Absolute Maximum Ratings (TC=25℃)
Parameter
Symbol
Drain-Source Voltage (VGS=0V)
VDS
Gate-Source Voltage (VDS=0V)
VGS
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
ID (DC)
ID (DC)
IDM (pluse)
Drain Source voltage slope, VDS = 480 V, ID = 20 A, Tj =
125 °C
dv/dt
Maximum Power Dissipation(Tc=25℃)
PD
Derate above 25°C
Single pulse avalanche energy (Note 2)
Avalanche current(Note 1)
Repetitive Avalanche energy ,tAR limited by Tjmax
(Note 1)
EAS
IAR
EAR
TO-220 TO-220F
NCE20NF60 NCE20NF60F
600
±30
20 20*
12.5 12.5*
60 60*
50
208 34.5
1.67 0.28
690
20
1
Unit
V
V
A
A
A
V/ns
W
W/°C
mJ
A
mJ
Wuxi NCE Power Semiconductor Co., Ltd
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NCE20NF60,NCE20NF60F
Parameter
Operating Junction and Storage Temperature Range
* limited by maximum junction temperature
Table 2. Thermal Characteristic
Parameter
Thermal Resistance,Junction-to-Case(Maximum)
Thermal Resistance,Junction-to-Ambient (Maximum)
Symbol
TJ,TSTG
Symbol
RthJC
RthJA
NCE20NF60 NCE20NF60F
-55...+150
Unit
°C
NCE20NF60
0.6
62
NCE20NF60F
3.6
80
Unit
°C /W
°C /W
Table 3. Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25℃)
Zero Gate Voltage Drain Current(Tc=125℃)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
BVDSS
IDSS
IDSS
IGSS
VGS(th)
RDS(ON)
VGS=0V ID=250μA
VDS=600V,VGS=0V
VDS=600V,VGS=0V
VGS=±30V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=10A
Dynamic Characteristics
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Intrinsic gate resistance
gFS VDS = 20V, ID = 10A
Clss
Coss
Crss
VDS=50V,VGS=0V,
F=1.0MHz
Qg
Qgs
VDS=480V,ID=20A,
VGS=10V
Qgd
RG f = 1 MHz open drain
Switching times
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
tr
td(off)
tf
VDD=380V,ID=20A,
RG=3.6Ω,VGS=10V
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Pulsed Source-drain current(Body Diode)
ISD
ISDM
TC=25°C
Forward on voltage
VSD Tj=25°C,ISD=20A,VGS=0V
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr Tj=25°C,IF=20A,di/dt=100A/μs
Peak reverse recovery current
Irrm
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25℃,VDD=50V,VG=10V, RG=25Ω
Min
600
3
Typ
180
17.5
2400
180
5.7
60
12
23
0.9
10
5
50
5
0.9
190
1.5
13
Max
1
100
±100
5
210
80
100
12
20
60
1.3
Unit
V
μA
μA
nA
V
mΩ
S
pF
pF
pF
nC
nC
nC
Ω
nS
nS
nS
nS
A
A
V
nS
uC
A
Wuxi NCE Power Semiconductor Co., Ltd
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NCE20NF60,NCE20NF60F
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (curves)
Figure1. Safe operating area for NCE20NF60
Figure2. Safe operating area for NCE20NF60F
Figure3. Source-Drain Diode Forward Voltage
Figure4. Output characteristics
Figure5. Transfer characteristics
Figure6. Static drain-source on resistance
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
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Номер в каталоге | Описание | Производители |
NCE20NF60 | N-Channel Super Junction Power MOSFET | NCE Power Semiconductor |
NCE20NF60F | N-Channel Super Junction Power MOSFET | NCE Power Semiconductor |
NCE20NF60T | N-Channel Super Junction Power MOSFET | NCE Power Semiconductor |
NCE20NF65T | N-Channel Super Junction Power MOSFET | NCE Power Semiconductor |
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