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PDF NCE15G120P Data sheet ( Hoja de datos )
| Número de pieza | NCE15G120P | |
| Descripción | Trench NPT IGBT | |
| Fabricantes | NCE Power Semiconductor | |
| Logotipo |  |
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http://www.ncepower.com
NCE15G120P
1200V, 15A, Trench NPT IGBT
Features
z Trench NPT( Non Punch Through) IGBT
z High speed switching
z Low saturation voltage: VCE(sat)=2.0V@IC=15A
z High input impedance
Applications
z Inductive heating, Microwave oven, Inverter, UPS, etc.
z Soft switching applications
General Description
Using advanced Trench NPT technology, NCE’s 1200V
IGBTs offers superior conduction and switching performances,
and easy parallel operation with exceptional avalanche rugged-
ness. This device is designed for soft switching applications.
Absolute Maximum Ratings
Pb Free Product
NCE15G120P
C
G
E
Symbol Description
VCES
VGES
IC
ICM(1)
PD
TJ
Tstg
TL
Collector to Emitter Voltage
Gate to Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
@TC=25°C
@TC=100°C
Maximum Power Dissipation @TC=25°C
Maximum Power Dissipation @TC=100°C
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering Purposes, 1/8" from
case for 5seconds
Notes:
1. Repetitive rating, Pulse width limited by max. junction temperature
Ratings
1200
+/-30
30
15
45
220
88
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
W
W
°C
°C
°C
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
1 page  
Pb Free Product
http://www.ncepower.com
NCE15G120P
Typical Performance Characteristics (Continued)
Figure13. Gate Charge Characteristics
Figure 14. SOA Characteristics
Gate Charge, Qg (nC)
Figure 15. Turn-Off SOA
Collector Emitter Voltage, (V)
Collector Emitter Voltage, (V)
Figure 16. Transient Thermal Impedance of IGBT
Wuxi NCE Power Semiconductor Co., Ltd
Page 5
v1.0
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NCE15G120P.PDF ] | |
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