NCE15GD120P PDF даташит
Спецификация NCE15GD120P изготовлена «NCE Power Semiconductor» и имеет функцию, называемую «Trench NPT IGBT». |
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Детали детали
Номер произв | NCE15GD120P |
Описание | Trench NPT IGBT |
Производители | NCE Power Semiconductor |
логотип |
8 Pages
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http://www.ncepower.com
NCE15GD120P
1200V, 15A, Trench NPT IGBT
Features
z Trench NPT( Non Punch Through) IGBT
z High speed switching
z Low saturation voltage: VCE(sat)=2.0V@IC=15A
z High input impedance
Applications
z Inductive heating, Microwave oven, Inverter, UPS, etc.
z Soft switching applications
General Description
Using advanced Trench NPT technology, NCE’s 1200V
IGBTs offers superior conduction and switching performances,
and easy parallel operation with exceptional avalanche rugged-
ness. This device is designed for soft switching applications.
Absolute Maximum Ratings
Pb Free Product
NCE15GD120P
Symbol Description
VCES
VGES
IC
ICM(1)
IF
IFM
PD
TJ
Tstg
Collector to Emitter Voltage
Gate to Emitter Voltage
Continuous Collector Current @TC=25°C
Continuous Collector Current @TC=100°C
Pulsed Collector Current
Diode Continuous Forward Current @TC=100°C
Diode Maximum Forward Current
Maximum Power Dissipation @TC=25°C
Maximum Power Dissipation @TC=100°C
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering Purposes, 1/8" from
TL case for 5seconds
Notes:
1. Repetitive rating, Pulse width limited by max. junction temperature
Ratings
1200
+/-30
30
15
45
15
90
220
88
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
W
W
°C
°C
°C
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
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Thermal Characteristics
Symbol
R JC
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Electrical Characteristics of the IGBT TC=25°C
Symbol Parameter
Off Characteristics
BVCES
Collector to Emitter
Breakdown Voltage
ICES Collector Cut-Off Current
IGES G-E Leakage Current
On Characteristics
VGE(th) G-E Threshold Voltage
VCE(sat)
Collector to Emitter Saturation
Voltage
Dynamic Characteristics
Cies Input Capacitance
Coes Output Capacitance
Cres
Reverse Transfer
Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
Ets Total Switching Loss
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
Ets Total Switching Loss
Qg Total Gate Charge
Qge Gate to Emitter Charge
Qgc Gate to Collector Charge
Test Conditions
VGE=0V, Ic=1mA
VCE= VCES, VGE=0V
VGE= VGES, VCE=0V
IC=15mA, VCE=VGE
IC=15A, VGE=15V
TC=25°C
IC=15A, VGE=15V
TC=125°C
VCE=30V, VGE=0V,
f=1MHz
VCC=600V,IC=15A,
RG=10Ώ,VGE=15V,
Resistive Load,
TC=25°C
VCC=600V,IC=15A,
RG=10Ώ,VGE=15V,
Resistive Load,
TC=125°C
VCC=600V,IC=15A,
VGE=15V
Pb Free Product
NCE15GD120P
Typ.
-
-
Max.
0.57
40
Units
°C/W
°C/W
Min. Typ. Max. Units
1200 - - V
--
1 mA
- - +/-250 nA
4.0 5.5
-2
7.0
2.5
V
V
- 2.15
-
V
- 2350
- 70
- 45
-
-
-
- 33
-
- 80
-
- 160
-
- 255 330
- 0.3
-
- 0.58 0.74
- 0.88
-
- 30
-
- 115
-
- 170
-
- 390
-
- 0.38
-
- 0.89
-
- 1.27
-
- 100
-
- 19
-
- 45
-
pF
pF
pF
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
nC
nC
nC
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
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Electrical Characteristics of Diode TC=25°C
Symbol
VFM
trr
Irr
Qrr
Parameter
Diode Forward Voltage
Diode Reverse Recovery
Time
Diode Peak Reverse
Recovery Current
Diode Reverse Recovery
Charge
Test Conditions
IF=15A
25°C
125°C
25°C
125°C
IF=15A,
dI/dt=200A/us
25°C
125°C
25°C
125°C
Pb Free Product
NCE15GD120P
Min.
Typ.
1.4
1.42
575
577
30
37
8.7
10.7
Max.
1.8
Units
V
V
ns
ns
A
A
uC
uC
Wuxi NCE Power Semiconductor Co., Ltd
Page 3
v1.0
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