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NCE25G120P PDF даташит

Спецификация NCE25G120P изготовлена ​​​​«NCE Power Semiconductor» и имеет функцию, называемую «Trench NPT IGBT».

Детали детали

Номер произв NCE25G120P
Описание Trench NPT IGBT
Производители NCE Power Semiconductor
логотип NCE Power Semiconductor логотип 

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NCE25G120P Даташит, Описание, Даташиты
http://www.ncepower.com
NCE25G120P
1200V, 25A, Trench NPT IGBT
Features
z Trench NPT( Non Punch Through) IGBT
z High speed switching
z Low saturation voltage: VCE(sat)=2.0V@IC=25A
z High input impedance
Applications
z Inductive heating, Microwave oven, Inverter, UPS, etc.
z Soft switching applications
General Description
Using advanced Trench NPT technology, NCE’s 1200V
IGBTs offers superior conduction and switching performances,
and easy parallel operation with exceptional avalanche rugged-
ness. This device is designed for soft switching applications.
Absolute Maximum Ratings
Pb Free Product
NCE25G120P
C
G
E
Symbol Description
VCES
VGES
IC
ICM(1)
PD
TJ
Tstg
Collector to Emitter Voltage
Gate to Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
@TC=25°C
@TC=100°C
Maximum Power Dissipation @TC=25°C
Maximum Power Dissipation @TC=100°C
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering Purposes, 1/8" from
TL case for 5seconds
Notes:
1. Repetitive rating, Pulse width limited by max. junction temperature
Ratings
1200
+/-30
50
25
90
312
125
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
W
W
°C
°C
°C
Wuxi NCE Power Semiconductor Co., Ltd
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NCE25G120P Даташит, Описание, Даташиты
Pb Free Product
http://www.ncepower.com
Thermal Characteristics
Symbol
R JC
RJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Electrical Characteristics of the IGBT TC=25°C
Symbol Parameter
Off Characteristics
BVCES
Collector to Emitter
Breakdown Voltage
ICES Collector Cut-Off Current
IGES G-E Leakage Current
On Characteristics
VGE(th) G-E Threshold Voltage
VCE(sat)
Collector to Emitter Saturation
Voltage
Dynamic Characteristics
Cies Input Capacitance
Coes Output Capacitance
Cres
Reverse Transfer
Capacitance
Switching Characteristics
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
Ets Total Switching Loss
td(on) Turn-On Delay Time
tr Rise Time
td(off) Turn-Off Delay Time
tf Fall Time
Eon Turn-On Switching Loss
Eoff Turn-Off Switching Loss
Ets Total Switching Loss
Qg Total Gate Charge
Qge Gate to Emitter Charge
Qgc Gate to Collector Charge
Test Conditions
VGE=0V, Ic=1mA
VCE=VCES, VGE=0V
VGE=VGES, VCE=0V
IC=25mA, VCE=VGE
IC=25A, VGE=15V
TC=25°C
IC=25A, VGE=15V
TC=125°C
VCE=30V, VGE=0V,
f=1MHz
VCC=600V,IC=25A,
RG=10Ώ,VGE=15V,
Resistive Load,
TC=25°C
VCC=600V,IC=25A,
RG=10Ώ,VGE=15V,
Resistive Load,
TC=125°C
VCC=600V,IC=25A,
VGE=15V
NCE25G120P
Typ.
-
-
Max.
0.4
40
Units
°C/W
°C/W
Min. Typ. Max. Units
1200 - - V
--
1 mA
- - +/-250 nA
4.0 5.5
-2
7.0
2.5
V
V
- 2.15
-
V
- 3700
- 130
- 80
-
-
-
pF
pF
pF
- 50
-
- 60 90
- 190
-
- 100 180
- 4.1 6.2
- 0.96 1.5
- 5.06 7.7
- 50
-
- 60
-
- 200
-
- 154
-
- 4.3 6.9
- 1.5 2.4
- 5.8 9.3
- 200 300
- 15 23
- 100 150
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
nC
nC
nC
Wuxi NCE Power Semiconductor Co., Ltd
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NCE25G120P Даташит, Описание, Даташиты
Pb Free Product
http://www.ncepower.com
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
NCE25G120P
Figure 2. Typical Saturation Voltage
Characteristics
Collector Emitter Voltage, VCE(V)
Collector Emitter Voltage, VCE(V)
Figure 3. Saturation Voltage vs. Case
Figure 4. Saturation Voltage vs. VGE
Temperature at Variant Current Level
Case temperature, Tc(°C)
Figure 5. Saturation Voltage vs. VGE
Gate Emitter Voltage, VGE( V)
Figure 6. Saturation Voltage vs. VGE
Gate Emitter Voltage, VGE( V)
Wuxi NCE Power Semiconductor Co., Ltd
Gate Emitter Voltage, VGE( V)
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Номер в каталогеОписаниеПроизводители
NCE25G120PTrench NPT IGBTNCE Power Semiconductor
NCE Power Semiconductor
NCE25G120TTrench NPT IGBTNCE Power Semiconductor
NCE Power Semiconductor

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