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C3599 PDF даташит

Спецификация C3599 изготовлена ​​​​«Sanyo» и имеет функцию, называемую «NPN Transistor - 2SC3599».

Детали детали

Номер произв C3599
Описание NPN Transistor - 2SC3599
Производители Sanyo
логотип Sanyo логотип 

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C3599 Даташит, Описание, Даташиты
Ordering number:ENN1764B
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1405/2SC3599
Ultrahigh-Definition CRT Display
Video Output Applications
Applications
· Ultrahigh-definition CRT display.
· Video output.
· Color TV chroma output.
· Wide-band amp.
Features
· High fT : fT typ=500MHz.
· High breakdown voltage : VCEO120V.
· Small reverse transfer capacitance and excellent
high-frequnecy characteristic
: Cre=2.5pF (NPN), 3.8pF (PNP).
· Complementary pair with the 2SA1405/2SC3599.
· Adoption of FBET process.
( ) : 2SA1405
Specifications
Package Dimensions
unit:mm
2009B
[2SA1405/2SC3599]
8.0
4.0
2.7
1.6
0.8
0.8
0.6
3.0
0.5
12 3
2.4
4.8
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=(–)80V, IE=0
Emitter Cutoff Current
IEBO VEB=(–)2V, IC=0
DC Current Gain
hFE1
hFE2
VCB=(–)10V, IC=(–)50mA
VCE=(–)10V, IC=250mA
Gain-Bandwidth Product
fT VCE=(–)10V, IC=(–)50mA
* : The 2SA1405/2SC3599 are classified by 50mA hFE as follows :
Rank
C
D
E
F
hFE 40 to 80 60 to 120 100 to 200 160 to 320
Ratings
(–)120
(–)120
(–)4
(–)300
(–)600
1.2
8
150
–55 to +150
Unit
V
V
V
mA
mA
W
W
˚C
˚C
Ratings
min typ max
Unit
(–)0.1 µA
(–)1.0 µA
40* 320*
20
500 MHz
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92502AS (KT)/71598HA (KT)/12696TS (KOTO) X-7233/3237KI/2225MW, TS No.1764-1/4









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C3599 Даташит, Описание, Даташиты
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Votage
Output Capacitance
Reverse Transfer Capacitance
2SA1405/2SC3599
Symbol
Conditions
VCE(sat) IC=(–)70mA, IB=(–)7mA
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=(–)70mA, IB=(–)7mA
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=
IE=(–)100µA, IC=0
Cob VCB=(–)30V, f=1MHz
Cre VCB=(–)30V, f=1MHz
Ratings
min typ
(–)120
(–)120
(–)4
2.9
(4.3)
2.5
(3.8)
max
0.6
(–)0.8
(–)1.0
Unit
V
V
V
V
V
V
pF
pF
pF
pF
--200
--160
--120
--80
--40
0
0
--350
--300
--250
--200
--150
--100
--50
0
0
3
2
100
7
5
3
2
IC -- VCE
2SA1405
--2.0mA
--1.8mA
--1.6mA
--1.4mA
--1.2mA
--1.0mA
--0.8mA
--0.6mA
--0.4mA
--0.2mA
IB=0
--4 --8 --12 --16 --20
Collector-to-Emitter Voltage, VCE – V ITR03462
IC -- VBE
2SA1405
VCE= --10V
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2
Base-to-Emitter Voltage, VBE – V ITR03464
hFE -- IC
2SA1405
VCE= --10V
10
7
5 3 5 7 --10 2 3 5 7 --100 2 3 5
Collector Current, IC – mA
ITR03466
200
2SC3599
IC -- VCE
2.0mA
1.8mA
1.6mA
160
1.4mA
1.2mA
120
1.0mA
0.8mA
80
0.6mA
0.4mA
40
0.2mA
IB=0
0
04
8 12 16 20
Collector-to-Emitter Voltage, VCE – V ITR03463
IC -- VBE
350
2SC3599
300 VCE=10V
250
200
150
100
50
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE – V ITR03465
hFE -- IC
3
2SC3599
2 VCE=10V
100
7
5
3
2
10
7
5
3 5 7 10
2 3 5 7 100
23
5
Collector Current, IC – mA
ITR03467
No.1764-2/4









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C3599 Даташит, Описание, Даташиты
2SA1405/2SC3599
1000 fT -- IC
fT -- IC
1000
2SA1405
2SC3599
7
VCE= --10V
7
VCE=10V
55
33
22
100
7
5
5 7 --10
23
5 7 --100
2
Collector Current, IC – mA
35
ITR03468
Cob -- VCB
5
2SA1405
3 f=1MHz
2
10
7
5
3
2
1.0 5
5
3
7 --1.0 2 3 5 7 --10 2 3 5 7 --100
Collector-to-Base Voltage, VCB -- V ITR03470
Cre -- VCB
2SA1405
f=1MHz
2
10
7
5
3
2
1.0 5 7 --1.0
23
5 7 --10
2 3 5 7 --100
Collector-to-Base Voltage, VCB -- V ITR03472
--10 VCE(sat) -- IC
7 2SA1405
5 IC / IB=0
3
2
--1.0
7
5
3
2
--0.1
7
5
3
3
5 7 --10
2 3 5 7 --100
Collector Current, IC – mA
23 5
ITR03474
100
7
5
5 7 10
5
3
2
23
5 7 100
Collector Current, IC – mA
Cob -- VCB
23
5
ITR03469
2SC3599
f=1MHz
10
7
5
3
2
1.0
7
5
5 7 1.0
2 3 5 7 10
2 3 5 7 100
Collector-to-Base Voltage, VCB -- V ITR03471
Cre -- VCB
5
2SC3599
3 f=1MHz
2
10
7
5
3
2
1.0
7
5
5 7 1.0
23
5 7 10
2 3 5 7 100
Collector-to-Base Voltage, VCB -- V ITR03473
VCE(sat) -- IC
10
7 2SC3599
5 IC / IB=10
3
2
1.0
7
5
3
2
0.1
7
5
3
3
5 7 10
2 3 5 7 100
Collector Current, IC – mA
23 5
ITR03475
No.1764-3/4










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