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2SA1416 PDF даташит

Спецификация 2SA1416 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Bipolar Transistor».

Детали детали

Номер произв 2SA1416
Описание Bipolar Transistor
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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2SA1416 Даташит, Описание, Даташиты
Ordering number : EN2005C
2SA1416/2SC3646
Bipolar Transistor
(–)100V, (–)1A, Low VCE(sat), (PNP)NPN Single PCP
http://onsemi.com
Features
Adoption of FBET, MBIT processes
High breakdown voltage and large current capacity
Fast switching speed
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s
Specications ( ) : 2SA1416
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Conditions
When mounted on ceramic substrate (250mm2×0.8mm)
Ratings
(--)120
(--)100
(--)6
(--)1
(--)2
500
1.3
150
--55 to +150
Unit
V
V
V
A
A
mW
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7007B-004
Top View
4.5
1.6
2SA1416S-TD-E
2SA1416T-TD-E
1.5 2SC3646S-TD-E
2SC3646T-TD-E
Product & Package Information
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Packing Type: TD
1
0.4
0.5
2
1.5
3.0
3
0.4
TD
Marking
RANK
RANK
0.75
2SA1416
2SC3646
Electrical Connection
22
1 : Base
2 : Collector
3 : Emitter
11
Bottom View
PCP
3
2SA1416
3
2SC3646
Semiconductor Components Industries, LLC, 2013
September, 2013
82212 TKIM/31010EA TKIM/O3103TN (KT)/71598HA (KT)/3277KI/N255MW, TS No.2005-1/7









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2SA1416 Даташит, Описание, Даташиты
2SA1416 / 2SC3646
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=(--)100V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)5V, IC=(--)100mA
VCE=(--)10V, IC=(--)100mA
VCB=(--)10V, f=1MHz
IC=(--)400mA, IB=(--)40mA
IC=(--)400mA, IB=(--)40mA
IC=(--)10μA, IE=0A
IC=(--)1mA, RBE=
IE=(--)10μA, IC=0A
See specied Test Circuit.
* : The 2SA1416 / 2SC3646 are classied by 100mA hFE as follows :
Rank
R
S
hFE
100 to 200
140 to 280
T
200 to 400
Switching Time Test Circuit
PW=20μs
D.C.1%
IB1
IB2
INPUT
RB
VR
50Ω
+
100μF
RL
+
470μF
--5V 50V
IC=10IB1=--10IB2=400mA
(For PNP, the polarity is reversed)
Ratings
min typ
100*
(--)120
(--)100
(--)6
120
(13)8.5
(--0.2)0.1
(--)0.85
(80)80
(700)850
(40)50
max
(--)100
(--)100
400*
(--0.6)0.4
(--)1.2
Unit
nA
nA
MHz
pF
V
V
V
V
V
ns
ns
ns
Ordering Information
Device
2SA1416S-TD-E
2SA1416T-TD-E
2SC3646S-TD-E
2SC3646T-TD-E
Package
PCP
PCP
PCP
PCP
Shipping
1,000pcs./reel
1,000pcs./reel
1,000pcs./reel
1,000pcs./reel
memo
Pb Free
No.2005-2/7









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2SA1416 Даташит, Описание, Даташиты
2SA1416 / 2SC3646
--1.0
2SA1416
--0.8 --25mA
--20mA
--0.6
IC -- VCE
--30mA
--15mA --10mA
--5mA
--3mA
--0.4 --2mA
--1mA
--0.2
1.0
2SC3646
0.8
0.6
0.4
0.2
IC -- VCE
30mA
25mA
20mA
15mA
10mA
5mA
3mA
2mA
1mA
0
0
--500
--400
--300
--200
--100
IB=0mA
--1 --2 --3 --4 --5
Collector-to-Emitter Voltage, VCE -- V ITR03526
IC -- VCE
--2.5mA
--2.0mA
2SA1416
--1.5mA
--1.0mA
--0.5mA
IB=0mA
0
012345
Collector-to-Emitter Voltage, VCE -- V ITR03527
IC -- VCE
500
2.0mA
2SC3646
400
1.5mA
300
1.0mA
200
0.5mA
100
0
0
--1.2
--1.0
IB=0mA
--10 --20 --30 --40 --50
Collector-to-Emitter Voltage, VCE -- V ITR03528
IC -- VBE
2SA1416
VCE=--5V
IB=0mA
0
0 10 20 30 40 50
Collector-to-Emitter Voltage, VCE -- V ITR03529
IC -- VBE
1.2
2SC3646
VCE=5V
1.0
--0.8
0.8
--0.6
0.6
--0.4
0.4
--0.2
0.2
0
0
1000
7
5
3
2
100
7
5
3
2
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2
Base-to-Emitter Voltage, VBE -- V ITR03530
hFE -- IC
2SA1416
VCE=--5V
Ta=75°C
25°C
--25°C
10 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3
Collector Current, IC -- A
ITR03532
0
0
1000
7
5
3
2
100
7
5
3
2
0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE -- V ITR03531
hFE -- IC
2SC3646
VCE=5V
Ta=75°C
25°C
--25°C
10 7 0.01
2 3 5 7 0.1
2 3 5 7 1.0
23
Collector Current, IC -- A
ITR03533
No.2005-3/7










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