C3673 PDF даташит
Спецификация C3673 изготовлена «Toshiba» и имеет функцию, называемую «NPN Transistor - 2SC3673». |
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Детали детали
Номер произв | C3673 |
Описание | NPN Transistor - 2SC3673 |
Производители | Toshiba |
логотип |
5 Pages
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TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC3673
Switching Applications
Solenoid Drive Applications
2SC3673
Unit: mm
• High DC current gain : hFE = 500 (min) (IC = 400 mA)
• Low collector-emitter saturation voltage
: VCE (sat) = 0.5 V (max) (IC = 300 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 40 V
Collector-emitter voltage
VCEO 40 V
Emitter-base voltage
VEBO 7 V
Collector current
IC 2 A
Base current
IB 0.5 A
Collector power dissipation
PC
1000
mW
JEDEC
―
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEITA
TOSHIBA
―
2-7D101A
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
Weight: 0.2 g (typ.)
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
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Electrical Characteristics (Ta = 25°C)
2SC3673
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Switching time Storage time
Fall time
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE
VCE (sat)
VBE (sat)
fT
Cob
VCB = 40 V, IE = 0
VEB = 7 V, IC = 0
IC = 10 mA, IB = 0
VCE = 1 V, IC = 400 mA
IC = 300 mA, IB = 1 mA
IC = 300 mA, IB = 1 mA
VCE = 2 V, IC = 100 mA
VCB = 10 V, IB = 0, f = 1 MHz
ton
20 μs
Input IB1
Output
IB2
tstg
VCC = 30 V
tf IB1 = 1 mA,IB2 = 1 mA
duty cycle ≤ 1%
Min Typ. Max Unit
――
――
40 ―
500 ―
― 0.3
――
― 220
― 20
10 μA
1 μA
―V
―
0.5 V
1.1 V
― MHz
― pF
― 1.0 ―
― 3.0 ―
μs
― 1.2 ―
Marking
C3673
Part No. (or abbreviation code)
Lot No.
(weekly code)
Note2
Note2: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
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IC – VCE
2.4
Common emitter
20 Ta = 25°C
2.0 10
5
1.6
2
1.2
1
0.8 0.5
0.4 IB = 0.2 mA
0
0
0 12 34 567
Collector-emitter voltage VCE (V)
VCE – IC
1.0
IB = 1 mA 5 10
20 30
Common emitter
Ta = 100°C
0.8
0.6 50
0.4
0.2
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
Collector current IC (A)
2SC3673
VCE – IC
1.2
Common emitter
Ta = 25°C
1.0
IB = 1 mA 5 10
20 30
0.8
0.6
0.4
50
0.2
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
Collector current IC (A)
VCE – IC
1.0
Common emitter
IB = 1 mA 5 10 20 Ta = −55°C
0.8 30
0.6
0.4
50
0.2
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8
Collector current IC (A)
5000
3000
1000
500
300
Ta = 100°C
25
−55
hFE – IC
Common emitter
VCE = 1 V
100
50
30
0.01
0.03 0.1 0.3
1
Collector current IC (A)
3
VCE (sat) – IC
5
Common emitter
3 IC/IB = 300
1
0.5
0.3
Ta = 100°C
0.1
25
−55
0.05
0.03
0.01
0.03 0.1 0.3
1
Collector current IC (A)
3
3
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2009-12-21
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