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C3777 PDF даташит

Спецификация C3777 изготовлена ​​​​«Sanyo» и имеет функцию, называемую «NPN Transistor - 2SC3777».

Детали детали

Номер произв C3777
Описание NPN Transistor - 2SC3777
Производители Sanyo
логотип Sanyo логотип 

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C3777 Даташит, Описание, Даташиты
Ordering number:EN1950B
NPN Epitaxial Planar Silicon Transistor
2SC3777
UHF Oscillator, Mixer, Low-Noise Amplifier,
Wide-Band Amplifier Applications
Applications
· UHF frequency converters, local oscillators, low-
noise amplifiers, wide-band amplifiers.
Features
· Small noise figure : NF=3.0dB typ (f=0.9GHz).
· High power gain : MAG=12dB typ (f=0.9GHz).
· High cutoff frequency : fT=3.5GHz typ.
Package Dimensions
unit:mm
2004A
[2SC3777]
JEDEC : TO-92
EIAJ : SC-43
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
ICBO
IEBO
hFE
fT
Cob
Cre
VCB=16V, IE=0
VEB=2V, IC=0
VCE=10V, IC=5mA
VCE=10V, IC=5mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
* : The 2SC3777 is classified by 5mA hFE as follows : 40 C 80 60 D 120 100 E 200
C : Collector
E : Emitter
B : Base
SANYO : NP
Ratings
25
16
3
50
20
400
150
–55 to +150
Unit
V
V
V
mA
mA
mW
˚C
˚C
Ratings
min typ
40*
1.8 3.5
0.7
0.45
max
1.0
10
200*
1.0
Unit
µA
µA
GHz
pF
pF
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N3098HA (KT)/5318MO/5137KI/O185KI, TS No.1950–1/5









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C3777 Даташит, Описание, Даташиты
Parameter
Forward Transfer Gain
Maximum Available Power Gain
Noise Figure
NF Test Circuit
2SC3777
Symbol
Conditions
| S21e |2
MAG
NF
VCE=10V, IC=10mA, f=0.9GHz
VCE=10V, IC=10mA, f=0.9GHz
VCE=10V, IC=3mA, f=0.9GHz,
See specified Test Circuit.
Ratings
min typ
7.5 9
12
3.0
max
5.0
Unit
dB
dB
dB
900MHz
C1 ~5pF
C2 ~10pF
C3 ~10pF
C4 ~10pF
C5 ~10pF
L1 W 1.5mm, l 25mm
Strip line
L2 W 4mm, l 25mm
Strip line
L3 0.5φ, l 40mm
CH 2t+bead core
No.1950–2/5









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C3777 Даташит, Описание, Даташиты
2SC3777
No.1950–3/5










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