DataSheet26.com

C3786 PDF даташит

Спецификация C3786 изготовлена ​​​​«Sanyo» и имеет функцию, называемую «NPN Transistor - 2SC3786».

Детали детали

Номер произв C3786
Описание NPN Transistor - 2SC3786
Производители Sanyo
логотип Sanyo логотип 

3 Pages
scroll

No Preview Available !

C3786 Даташит, Описание, Даташиты
Ordering number:ENN2299A
NPN Epitaxial Planar Type Silicon Transistor
2SC3786
Driver Applications
Applications
· Suitable for use in switching of L load (motor
drivers, printer hammer drivers, relay drivers).
Features
· High DC current gain.
· Wide ASO.
· On-chip Zener diode of 60±10V between collector
and base.
· Uniformity in collector-to-base breakdown voltage.
· Large inductive load handling capability.
Package Dimensions
unit:mm
2043B
[2SC3786]
8.0
4.0
2.0
2.7
1.6
0.8
0.8
0.6
0.5
12 3
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC
Junction Temperature
Storage Temperature
* : On-chip Zener diode (60±10V)
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Tc=25˚C
2.4
4.8
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
ICBO
IEBO
hFE
fT
VCE(sat)
VBE(sat)
VCB=40V, IE=0
VEB=5V, IC=0
VCE=5V, IC=1.5A
VCE=5V, IC=1.5A
IC=1.5A, IB=6mA
IC=1.5A, IB=6mA
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126LP
Ratings
50*
50*
6
3
6
1.2
20
150
55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ max
Unit
10 µA
2 mA
1000 4000
180 MHz
1.0 1.5 V
2.0 V
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70804TN (PC)/D0198HA (KT)/D251MH/5257TA, TS No.2299–1/3









No Preview Available !

C3786 Даташит, Описание, Даташиты
Continued from preceding page.
Parameter
Inductive Load Handling Capability
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Turn-on Time
Storage Time
Fall Time
2SC3786
Symbol
Conditions
Es/b
V(BR)CBO
V(BR)CEO
ton
tstg
tf
L=100mH, RBE=100
IC=100µA, IE=0
IC=1mA, RBE=
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
Ratings
min typ
25
50 60
50 60
0.2
3.5
0.7
max
70
70
Unit
mJ
V
V
µs
µs
µs
Switching Time Test Circuit
PW=50µs, Duty Cycle1%
IB1=--IB2=6mA
INPUT
RB
50VR
+
100µF
VBB=--5V
IC=250, IB1=--250, IB2=1.5A
OUTPUT
TUT
RL
+
470µF
VCC=20V
Es/b Test Circuit
VCC=20V, RBE=100
SW
L +VCC
TUT
IB RBE
10k300
IC -- VCE
5
5mA
4mA
4 3mA
3 2mA
2
1
0
0
10000
7
5
3
2
1000
7
5
3
2
1mA
800µA
600µA
400µA
IB=0
12 345
Collector-to-Emitter Voltage, VCE V ITR06014
hFE -- IC
VCE=5V
Ta=120°C
25°C
--40°C
100
5 7 0.1
2 3 5 7 1.0
23
Collector Current, IC A
5 7 10
ITR06016
IC -- VBE
4
VCE=5V
3
2
1
0
0
3
2
10
7
5
3
2
1.0
7
5
3
0.1
0.4 0.8 1.2 1.6 2.0 2.4
Base-to-Emitter Voltage, VBE V ITR06015
VCE(sat) -- IC
IC / IB=250
25°C
120°C
Ta=--40°C
23
5 7 1.0
23
Collector Current, IC A
5 7 10
ITR06017
No.2299–2/3









No Preview Available !

C3786 Даташит, Описание, Даташиты
2SC3786
VBE(sat) -- IC
10
IC / IB=250
7
5
10
7
5
3
2
25°C
1.0
Ta=--40°C
120°C
3
2
1.0
7
5
7
5
0.1
23
5 7 1.0
23
5 7 10
Collector Current, IC A
ITR06018
ASO
7
5 ICP=6A
IC=3A
3
Tc=25°C
Single pulse
2
1.0
7
5
3
3
24
20
16
12
3
8
2
0.1
7
5
1.0
23
5 7 10
23
5 7 100
Collector-to-Emitter Voltage, VCE V ITR06020
4
1.2
0
0
IC -- L
RBE=100
Tc=25°C
25mJ
5 7 10
23
L mH
PC -- Ta
5 7 100
ITR06019
Ideal radiation
No heat sink
20 40 60 80 100 120
Ambient Temperature, Ta – ˚C
140 150 160
ITR06021
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2004. Specifications and information herein are subject to
change without notice.
PS No.22993/3










Скачать PDF:

[ C3786.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
C3780NPN Transistor - 2SC3780Sanyo
Sanyo
C3781NPN Transistor - 2SC3781Sanyo
Sanyo
C3782NPN Transistor - 2SC3782Sanyo Semicon Device
Sanyo Semicon Device
C3783Silicon NPN Power TransistorInchange Semiconductor
Inchange Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск