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C4134 PDF даташит

Спецификация C4134 изготовлена ​​​​«Sanyo» и имеет функцию, называемую «NPN Transistor - 2SC4134».

Детали детали

Номер произв C4134
Описание NPN Transistor - 2SC4134
Производители Sanyo
логотип Sanyo логотип 

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C4134 Даташит, Описание, Даташиты
Ordering number:ENN2510A
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1592/2SC4134
High-Voltage Switching Applications
Applications
· Power supplies, relay drivers, lamp drivers.
Features
· Adoption FBET, MBIT processes.
· High breakdown voltage and large current capacity.
· Fast switching speed.
· Small and slim package permitting 2SA1592/
2SC4134-applied sets to be made more compact.
Package Dimensions
unit:mm
2045B
[2SA1592/2SC4134]
6.5
5.0 2.3
4 0.5
unit:mm
2044B
0.85
0.7
0.6
12 3
2.3 2.3
1.2
0.5
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
[2SA1592/2SC4134]
6.5 2.3
5.0 0.5
4
0.85
1
0.6
2
3
2.3 2.3
0.5
1.2
0 to 0.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1003TN (KT)/72098HA (KT)/8219MO/4097TA, TS No.2510-1/5









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C4134 Даташит, Описание, Даташиты
2SA1592/2SC4134
( ) : 2SA1592
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Collector Dissipation
PC Tc=25˚C
Junction Temperature
Tj
Storage Temperature
Tstg
* : The 2SA1592/2SC4134 are classified by 100mA hFE as follows :
Rank
hFE
RST
100 to 200 140 to 280 200 to 400
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breadown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Symbol
Conditions
ICBO
IEBO
hFE
fT
Cob
VCB=()100V, IE=0
VEB=()4V, IC=0
VCE=()5V, IC=()100mA
VCE=()10V, IC=()100mA
VCB=()10V, f=1MHz
VCE(sat) IC=()400mA, IB=()40mA
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=()400mA, IB=()40mA
IC=()10µA, IE=0
IC=()1mA, RBE=
IE=()10µA, IC=0
ton See specified Test Circuit
tstg See specified Test Circuit
tf See specified Test Circuit
Switching Time Test Circuit
IB1
INPUT
PW=20µs
DC1%
50
VR
IB2
RB
+
OUTPUT
RL
+
100µF 470µF
--5V 50V
10IB1= --10IB2=IC=400mA
For PNP, the polarity is reversed.
Ratings
()120
()100
()6
()1
()2
0.8
10
150
55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ
100*
120
8.5
(13)
(0.2)
0.1
()0.85
()120
()100
()6
(80)
80
(700)
850
(40)
50
max
()100
()100
400*
(0.6)
0.4
()1.2
Unit
nA
nA
MHz
pF
pF
V
V
V
V
V
V
ns
ns
ns
ns
ns
ns
No.2510-2/5









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C4134 Даташит, Описание, Даташиты
2SA1592/2SC4134
--1.0
2SA1592
--0.8
--30mA
--0.6
IC -- VCE
--25mA
--20mA
--15m-A-10mA
--5mA
1.0
2SC4134
0.8 30m25AmA
IC -- VCE
0.6
--3mA
--0.4
--2mA
0.4
--1mA
--0.2 0.2
20mA
15mA
10mA
5mA
3mA
2mA
1mA
0
0
--500
--400
--300
--200
--100
IB=0
--1 --2 --3 --4 --5
Collector-to-Emitter Voltage, VCE – V ITR03995
IC -- VCE
--2.5mA
2SA1592
--2.0mA
--1.5mA
--1.0mA
--0.5mA
0 IB=0
0 12 345
Collector-to-Emitter Voltage, VCE – V ITR03996
IC -- VCE
500
2SC4134
2.0mA
400
1.5mA
300
1.0mA
200
0.5mA
100
0
0
--1.2
--1.0
IB=0
--10 --20 --30 --40 --50
Collector-to-Emitter Voltage, VCE – V ITR03997
IC -- VBE
2SA1592
VCE=--5V
0 IB=0
0 10 20 30 40 50
Collector-to-Emitter Voltage, VCE – V ITR03998
IC -- VBE
1.2
2SC4134
VCE=5V
1.0
--0.8 0.8
--0.6 0.6
--0.4 0.4
--0.2
0
0
1000
7
5
3
2
100
7
5
3
2
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2
Base-to-Emitter Voltage, VBE – V ITR03999
hFE -- IC
2SA1592
VCE=--5V
Ta=75°C
25°C --25°C
10
7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3
Collector Current, IC – A
ITR04001
0.2
0
0
1000
7
5
3
2
100
7
5
3
2
0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE – V ITR04000
hFE -- IC
2SC4134
VCE=5V
Ta=75°C
25°C
--25°C
10
7 0.01
2 3 5 7 0.1 2 3 5 7 1.0 2 3
Collector Current, IC – A
ITR04002
No.2510-3/5










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