DataSheet26.com

C4364 PDF даташит

Спецификация C4364 изготовлена ​​​​«Sanyo» и имеет функцию, называемую «NPN Transistor - 2SC4364».

Детали детали

Номер произв C4364
Описание NPN Transistor - 2SC4364
Производители Sanyo
логотип Sanyo логотип 

5 Pages
scroll

No Preview Available !

C4364 Даташит, Описание, Даташиты
Ordering number:EN3008
NPN Epitaxial Planar Silicon Transistor
2SC4364
VHF, UHF/MIX. OSC. Low-Voltage
High-Frequency Amplifier Applications
Features
· Low-voltage operation
: fT=3.0GHz typ (VCE=3V)
: MAG=11dB typ (VCE=3V, IC=3mA)
: NF=3.0dB typ (VCE=3V, IC=3mA)
Package Dimensions
unit:mm
2018B
[2SC4364]
0.4
3
0.16
0~0.1
1 0.95 0.95 2
1.9
2.9
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Reverse Transfer Capacitance
ICBO
IEBO
hFE
fT
Cob
Cre
VCB=15V, IE=0
VEB=2V, IC=0
VCE=3V, IC=3mA
VCE=3V, IC=3mA
VCB=3V, f=1MHz
VCB=3V, f=1MHz
* : The 2SC4364 is classified by 3mA hFE as follows :
(Note) Marking : OT
hFE rank : 2, 3, 4
40 2 80
60 3 120 100 4 200
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
Ratings
25
15
3
30
250
150
–55 to +150
Unit
V
V
V
mA
mW
˚C
˚C
Ratings
min typ
40*
3.0
0.75
0.7
max
1.0
1.0
200*
1.3
Unit
µA
µA
GHz
pF
pF
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2598HA (KT)/6069MO, TS No.3008–1/5









No Preview Available !

C4364 Даташит, Описание, Даташиты
Parameter
Forward Transfer Gain
Maximum Available Power Gain
Noise Figure
NF Test Circuit
2SC4364
Symbol
Conditions
| S21e |2
MAG
NF
VCE=3V, IC=3mA, f=0.9GHz
VCE=3V, IC=3mA, f=0.9GHz
VCE=3V, IC=3mA, f=0.9GHz
Ratings
min typ max
Unit
7 dB
11 dB
3.0 5.0 dB
900MHz
C1 ~5pF
C2 ~10pF
C3 ~10pF
C4 ~10pF
C5 ~10pF
L1 W 1.5mm, l 25mm Strip line
L2 W 4mm, l 25mm Strip line
L3 0.5φ, l 40mm
CH 2t+bead core
No.3008–2/5









No Preview Available !

C4364 Даташит, Описание, Даташиты
2SC4364
S parameter
No.3008–3/5










Скачать PDF:

[ C4364.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
C4361PNP/NPN Epitaxial Planar Silicon TransistorsSanyo Semicon Device
Sanyo Semicon Device
C4364NPN Transistor - 2SC4364Sanyo
Sanyo
C4365NPN Transistor - 2SC4365Sanyo
Sanyo
C4367NPN Transistor - 2SC4367Hitachi Semiconductor
Hitachi Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск