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C4435 PDF даташит

Спецификация C4435 изготовлена ​​​​«Sanyo» и имеет функцию, называемую «NPN Transistor - 2SC4435».

Детали детали

Номер произв C4435
Описание NPN Transistor - 2SC4435
Производители Sanyo
логотип Sanyo логотип 

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C4435 Даташит, Описание, Даташиты
Ordering number:EN3791
NPN Triple Diffused Planar Silicon Transistor
2SC4435
Ultrahigh-Definition Color Display
Horizontal Deflection Output Applications
Features
· Fast switching speed (tf=300ns max).
· High brocking voltage (VCBO=1500V).
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
Package Dimensions
unit:mm
2022A
[2SC4435]
15.6 3.2
14.0
4.8
2.0
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Tc=25˚C
1.6
2.0
1.0
12
0.6
3
5.45 5.45
Conditions
1.4
0.6
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PB
Ratings
1500
800
7
5
16
2.5
100
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Collector Cutoff Current
Collector-to-Emitter Sastain Voltage
Emitter Cutoff Current
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Symbol
Conditions
ICBO
ICES
VCEO(sus)
IEBO
VCE(sat)
VBE(sat)
VCB=800V, IE=0
VCE=1500V
IC=100mA, IB=0
VEB=4V, IC=0
IC=4A, IB=1A
IC=4A, IB=1A
Ratings
min typ
800
max
10
1.0
1.0
5
1.5
Unit
µA
mA
V
mA
V
V
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2598HA (KT)/11195TS (KOTO) 8-3773 No.3791–1/4









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C4435 Даташит, Описание, Даташиты
Parameter
DC Current Gain
Storage Time
Fall Time
Switching Time Test Circuit
2SC4435
Symbol
hFE1
hFE2
tstg
tf
Conditions
VCE=5V, IC=1A
VCE=5V, IC=4A
IC=4A, IB1=0.8A, IB2=–1.6A
IC=4A, IB1=0.8A, IB2=–1.6A
Ratings
min typ
8
4
max
6
3.0
0.3
Unit
µs
µs
No.3791–2/4









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C4435 Даташит, Описание, Даташиты
2SC4435
No.3791–3/4










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