A1710 PDF даташит
Спецификация A1710 изготовлена «Sanyo» и имеет функцию, называемую «PNP Transistor - 2SA1710». |
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Детали детали
Номер произв | A1710 |
Описание | PNP Transistor - 2SA1710 |
Производители | Sanyo |
логотип |
5 Pages
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Ordering number:EN3097
Features
· High breakdown voltage (VCEO≥300V).
· Excellent high frequency characteristic.
· Adoption of MBIT process.
PNP/NPN Epitaxial Planar Silicon Transistors
2SA1710/2SC4490
High-Definition CRT Display
Video Output Applications
Package Dimensions
unit:mm
2064
[2SA1710/2SC4490]
( ) : 2SA1710
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Output Capacitance
ICBO
IEBO
hFE
fT
VCE(sat)
VBE(sat)
Cob
VCB=(–)200V, IE=0
VEB=(–)4V, IC=0
VCE=(–)10V, IC=(–)10mA
VCE=(–)30V, IC=(–)10mA
IC=(–)20mA, IB=(–)2mA
IC=(–)20mA, IB=(–)2mA
VCB=(–)30V, f=1MHz
E : Emitter
C : Collector
B : Base
SANYO : NMP
Ratings
(–)300
(–)300
(–)5
(–)100
(–)200
1
150
–55 to +150
Unit
V
V
V
mA
mA
W
˚C
˚C
Ratings
min typ
70*
70
(3.1)
2.6
max
(–)100
(–)100
280*
(–)0.6
(–)1.0
Unit
nA
nA
MHz
V
V
pF
pF
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83098HA (KT)/5169MO, TS No.3097–1/5
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2SA1710/2SC4490
Parameter
Reverse Transfer Capacitance
Symbol
Conditions
Cre VCB=(–)30V, f=1MHz
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=∞
IE=(–)10µA, IC=0
* : The 2SA1710/2SC4490 are classified by 100mA hFE as follows :
70 Q 140 100 R 200 140 S 280
Ratings
min typ
(2.3)
1.8
(–)300
(–)300
(–)5
max
Unit
pF
pF
V
V
V
No.3097–2/5
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2SA1710/2SC4490
No.3097–3/5
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Номер в каталоге | Описание | Производители |
A1710 | PNP Transistor - 2SA1710 | Sanyo |
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DataSheet26.com | 2020 | Контакты | Поиск |