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C4523 PDF даташит

Спецификация C4523 изготовлена ​​​​«Sanyo» и имеет функцию, называемую «NPN Transistor - 2SC4523».

Детали детали

Номер произв C4523
Описание NPN Transistor - 2SC4523
Производители Sanyo
логотип Sanyo логотип 

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C4523 Даташит, Описание, Даташиты
Ordering number:EN3142A
NPN Epitaxial Planar Silicon Transistors
2SC4523
High-Speed Switching Applications
Features
· Adoption of FBET, MBIT process.
· Large current capacity.
· Low collector-to-emitter saturation voltage.
· Fast switching speed.
Package Dimensions
unit:mm
2045B
[2SC4522]
6.5
5.0
4
2.3
0.5
unit:mm
2044B
0.85
0.7
0.6
123
2.3 2.3
1.2
1 : Base
0.5 2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
[2SC4522]
6.5 2.3
5.0 0.5
4
0.85
1
0.6
2
3
2.3 2.3
0.5
1.2
0~0.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11299HA (KT)/7130MH/7059MO, TS No.3142–1/4









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C4523 Даташит, Описание, Даташиты
2SC4523
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Tc=25˚C
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
ICBO
IEBO
hFE1
hFE2
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=45V, IE=0
VEB=2V, IC=0
VCE=2V, IC=500mA
VCE=2V, IC=8A
VCE=2V, IC=500mA
VCB=10V, f=1MHz
IC=4A, IB=200mA
IC=4A, IB=200mA
IC=100µA, IE=0
IC=1mA, RBE=
IE=100µA, IC=0
See specified test circuit.
See specified test circuit.
See specified test circuit.
* : The 2SC4523 is classified by 500mA hFE as follows :
100 R 200 140 S 280 200 T 400
Switching Time Test Circuit
Ratings
60
45
5
8
12
1
15
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Ratings
min typ
100*
40
60
45
5
250
65
0.25
0.95
50
150
180
max
1
10
400*
0.7
1.3
100
270
350
Unit
µA
µA
MHz
pF
V
V
V
V
V
ns
ns
ns
No.3142–2/4









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C4523 Даташит, Описание, Даташиты
2SC4523
No.3142–3/4










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