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даташит 2SC4555 PDF ( Datasheet )

2SC4555 Datasheet Download - GME

Номер произв 2SC4555
Описание NPN Silicon Epitaxial Planar Transistor
Производители GME
логотип GME логотип 



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2SC4555 Даташит, Описание, Даташиты
NPN Silicon Epitaxial Planar Transistor
FEATURES
z Complements the 2SA1745.
Pb
Lead-free
Production specification
2SC4555
APPLICATIONS
z Ideal for low-voltage operation.
ORDERING INFORMATION
Type No.
Marking
2SC4555
UT
SOT-323
Package Code
SOT-323
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
Parameter
Value
VCBO
VCEO
VEBO
IC
PC
Tj,Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
20
15
5
500
150
-55 to +150
Units
V
V
V
mA
mW
F094
Rev.A
www.gmicroelec.com
1







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2SC4555 Даташит, Описание, Даташиты
Production specification
NPN Silicon Epitaxial Planar Transistor
2SC4555
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=10μA,IE=0
20
V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0
15
V
Emitter-base breakdown voltage
V(BR)EBO IE=10μA,IC=0
5
V
Collector cut-off current
ICBO VCB=15V,IE=0
0.1 μA
Emitter cut-off current
DC current gain
IEBO
hFE
Collector-emitter saturation voltage VCE(sat)
Base-emitter saturation voltage
VBE(sat)
VEB=4V,IC=0
VCE=2V,IC=10 mA
VCE=2V,IC=400mA
IC=5mA, IB=0.5mA
IC=200mA, IB=10mA
IC=-200mA, IB=-10mA
0.1
135 600
80
15 30
160 300
0.95 1.2
μA
V
V
Transition frequency
fT VCE=2V, IC=50mA
300 MHz
Collector output capacitance
Cob VCB=10V,f=1MHz
4.0 pF
CLASSIFICATION OF hFE(1)
Range
135-270
200-400
300-600
F094
Rev.A
www.gmicroelec.com
2







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2SC4555 Даташит, Описание, Даташиты
Production specification
NPN Silicon Epitaxial Planar Transistor
2SC4555
TYPICAL CHARACTERISTICS @ Ta=25unless otherwise specified
F094
Rev.A
www.gmicroelec.com
3










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