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C4682 PDF даташит

Спецификация C4682 изготовлена ​​​​«Toshiba» и имеет функцию, называемую «NPN Transistor - 2SC4682».

Детали детали

Номер произв C4682
Описание NPN Transistor - 2SC4682
Производители Toshiba
логотип Toshiba логотип 

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C4682 Даташит, Описание, Даташиты
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4682
Strobe Flash Applications
Medium Power Amplifier Applications
2SC4682
Unit: mm
Excellent hFE linearity: hFE (1) = 800 to 3200 (VCE = 1 V, IC = 0.5 A)
: hFE (2) = 500 (typ.) (VCE = 1 V, IC = 3 A)
Low saturation voltage: VCE (sat) = 0.5 V (max)
(IC = 3 A, IB = 30 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCES
V (BR) CEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Rating
30
30
15
6
3
6
0.8
900
150
55 to 150
Unit
V
V
V
A
A
mW
°C
°C
JEDEC
TO-92MOD
JEITA
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE
fT
Cob
VCB = 30 V, IE = 0
VEB = 6 V, IC = 0
IC = 10 mA, IB = 0
VCE = 1 V, IC = 0.5 A
VCE = 1 V, IC = 3 A
IC = 3 A, IB = 30 mA
VCE = 1 V, IC = 3 A
VCE = 1 V, IC = 0.5 A
VCB = 10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
― ― 1 µA
― ― 10 µA
15 ― ―
V
800 3200
300 500
0.25 0.5
V
0.85 1.2
V
150 MHz
30 pF
1 2004-07-26









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C4682 Даташит, Описание, Даташиты
Marking
C4682
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2SC4682
2 2004-07-26









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C4682 Даташит, Описание, Даташиты
2SC4682
IC – VCE
6
Common emitter
5 Ta = 25°C
4
3
5m
4m
3m
2m
2 1m
500 µ
1
IB = 100 µA
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
10000
1000
Tc = 100°C
25
25
hFE – IC
Common emitter
VCE = 1 V
100
0.01
0.1 1
Collector current IC (A)
10
VCE (sat) – IC
10
Common emitter
IC/IB = 200
3
1
0.3
0.1
Tc = 100°C
0.03 25
0.01
0.01
25
0.03 0.1 0.3 1 3
Collector current IC (mA)
10
PC – Ta
1.0
0.8
0.6
0.4
0.2
0
0 40 80 120 160 200 240
Ambient temperature Ta (°C)
IC – VBE
8
Common emitter
VCE = 1 V
6
4
2
Tc = 100°C 25
25
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-emitter voltage VBE (V)
Safe Operating Area
10
IC max (pulsed)*
5
3 IC max (continuous) 10 ms*
1 ms*
1 100 ms*
0.5
0.3 DC operation
Ta = 25°C
0.1
0.05
*: Single nonrepetitive pulse
0.03 Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
0.01
0.1 0.3 0.5
1
VCEO max
3 5 10
Collector-emitter voltage VCE (V)
30
3 2004-07-26










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