C4734 PDF даташит
Спецификация C4734 изготовлена «Sanyo» и имеет функцию, называемую «NPN Transistor - 2SC4734». |
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Детали детали
Номер произв | C4734 |
Описание | NPN Transistor - 2SC4734 |
Производители | Sanyo |
логотип |
5 Pages
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Ordering number:EN4409
2SA1830 : PNPEpitaxial Planar Silicon Transistor
2SC4734 ; NPN Triple Diffused Planar Silicon Transistor
2SA1830/2SC4734
High-Voltage Driver Applications
Features
· Large current capacity (IC=2A).
· High breakdown voltage (VCEO≥400V).
· Possible to offer the 2SA1830/2SC4734 devices in a
tape reel packaging, which facilitates automatic
insertion.
Package Dimensions
unit:mm
2084A
[2SA1830/2SC4734]
( ) : 2SA1830
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO VCB=(–)300V, IE=0
Emitter Cutoff Current
IEBO VEB=(–)4V, IC=0
DC Current Gain
hFE VCE=(–)10V, IC=(–)100mA
Gain-Bandwidth Product
fT VCE=(–)10V, IC=(–)100mA
Output Capacitance
Collector-to-Emitter Saturation Voltage
Cob VCB=(–)30V, f=1MHz
VCE(sat) IC=(–)500mA, IB=(–)50mA
Base-to-Emitter Saturation Voltage
VBE(sat) IC=(–)500mA, IB=(–)50mA
* : The 2SA1830/2SC4734 are classified by 100mA hFE as follows :
40 C 80 60 D 120 100 E 200
1 : Emitter
2 : Collector
3 : Base
SANYO : FLP
Ratings
(–)400
(–)400
(–)5
(–)2
(–)4
1.5
150
–55 to +150
Unit
V
V
V
A
A
W
˚C
˚C
Ratings
min typ
40*
(40)60
(25)15
max
(–)1.0
(–)1.0
200*
(–)1.0
(–)1.0
Unit
µA
µA
MHz
pF
V
V
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
91098HA (KT)/53094MT (KOTO) AX-8318 No.4409–1/5
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Parameter
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Switching Time Test Circuit
2SA1830/2SC4734
Symbol
Conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
IC=(–)10µA, IE=0
IC=(–)1mA, RBE=∞
IE=(–)10µA, IC=0
See specified Test Circuit
tstg See specified Test CIrcuit
tf See specified Test Circuit
Ratings
min typ
(–)400
(–)400
(–)5
(0.12)
0.085
(3.0)
4.0
(0.3)
0.6
max
Unit
V
V
V
µs
µs
µs
µs
µs
µs
(Unit resistance : Ω, capacitacne : F)
No.4409–2/5
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2SA1830/2SC4734
No.4409–3/5
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Номер в каталоге | Описание | Производители |
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C4731 | NPN Transistor - 2SC4731 | Sanyo Semicon Device |
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C4734 | NPN Transistor - 2SC4734 | Sanyo |
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DataSheet26.com | 2020 | Контакты | Поиск |