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2SC4919-S Datasheet Download - Sanyo

Номер произв 2SC4919-S
Описание NPN Epitaxial Planar Silicon Transistor
Производители Sanyo
логотип Sanyo логотип 

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2SC4919-S Даташит, Описание, Даташиты
Ordering number : ENA1086
2SC4919-S
SANYO Semiconductors
DATA SHEET
2SC4919-S NPN Epitaxial Planar Silicon Transistor
Muting Circuit Applications
Features
Ultrasmall-sized package permitting applied sets to be made small and slim.
Small output capacitance.
Low collector-to-emitter saturation voltage.
Low ON resistance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
ICBO
IEBO
hFE
fT
Cob
Conditions
VCB=15V, IE=0A
VEB=4V, IC=0A
VCE=2V, IC=5mA
VCE=5V, IC=10mA
VCB=10V, f=1MHz
Ratings
25
15
15
100
200
20
150
150
--55 to +150
Unit
V
V
V
mA
mA
mA
mW
°C
°C
min
800
Ratings
typ
max
Unit
0.1 μA
0.1 μA
3200
240 MHz
1.4 pF
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer's products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70208LA TI IM TC-00001496 No. A1086-1/4
Downloaded from Elcodis.com electronic components distributor







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2SC4919-S Даташит, Описание, Даташиты
Continued from preceding page.
Parameter
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
On Resistance
2SC4919-S
Symbol
Conditions
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
Ron
IC=10mA, IB=1mA
IC=10mA, IB=1mA
IC=10μA, IE=0A
IC=1mA, RBE=
IE=10μA, IC=0A
IB=3mA, f=1MHz
Package Dimensions
unit : mm (typ)
7029-002
Top View
1.4
0.25
3
12
0.2
0.45
0.1
12
3
Bottom View
1 : Base
2 : Emitter
3 : Collector
SANYO : SSFP
min
25
15
15
Ratings
typ
14
0.74
0.9
max
30
1.1
Unit
mV
V
V
V
V
Ω
100
80 11860μ0μAA 140μA
60
40
20
IC -- VCE
120μA
100μA
80μA
60μA
40μA
20μA
0 IB=0μA
0 0.4 0.8 1.2 1.6 2.0
Collector-to-Emitter Voltage, VCE -- V ITR07753
Downloaded from Elcodis.com electronic components distributor
IC -- VCE
10
5.0μA
8 4.5μA
4.0μA
6 3.5μA
3.0μA
2.5μA
4 2.0μA
1.5μA
2 1.0μA
0.5μA
0 IB=0μA
012345
Collector-to-Emitter Voltage, VCE -- V ITR07754
No. A1086-2/4







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2SC4919-S Даташит, Описание, Даташиты
120
100
80
60
40
20
0
0
1000
7
5
3
2
IC -- VBE
2SC4919-S
VCE=2V
5
3
2
1000
7
5
3
2
hFE -- IC
Ta=75°C
25°C
--25°C
VCE=2V
0.2 0.4 0.6 0.8 1.0 1.2
Base-to-Emitter Voltage, VBE -- V ITR07755
f T -- IC
VCE=5V
100
7 1.0
10
7
5
2 3 5 7 10
2 3 5 7 100
2
Collector Current, IC -- mA
Cob -- VCB
ITR07756
f=1MHz
3
2
100
7
5
3
7 1.0
2
2 3 5 7 10
2 3 5 7 100
2
Collector Current, IC -- mA
ITR07757
VCE(sat) -- IC
IC / IB=10
100
7
5
3 25°C
2
10
Ta=75°-C-25°C
7
5
3
7 0.1 2 3
2
f=1MHz
10
7
5 7 1.0 2 3 5 7 10 2 3
Collector Current, IC -- mA
Ron -- IB
1kΩ
IN
10kΩ
IB
5 7 100 2
ITR07759
OUT
5
3
2
1.0
7
5
3
7 0.1
23
5 7 1.0
2
Base Current, IB -- mA
3 57
ITR07761
Downloaded from Elcodis.com electronic components distributor
1.0
7
5
3
7 1.0
3
2
23
5 7 10
23
5
Collector-to-Base Voltage, VCB -- V ITR07758
VBE(sat) -- IC
IC / IB=10
25°C
1.0 Ta= --25°C
7
5 75°C
3
2
0.1
7
5
7 0.1
160
150
140
2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2
Collector Current, IC -- mA
ITR07760
PC -- Ta
120
100
80
60
40
20
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C ITR07762
No. A1086-3/4










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