C5111 PDF даташит
Спецификация C5111 изготовлена «Toshiba» и имеет функцию, называемую «NPN Transistor - 2SC5111». |
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Детали детали
Номер произв | C5111 |
Описание | NPN Transistor - 2SC5111 |
Производители | Toshiba |
логотип |
6 Pages
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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5111
2SC5111
For VCO Application
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Base current
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IB
IC
PC
Tj
Tstg
20
10
3
30
60
100
125
−55 to 125
V
V
V
mA
mA
mW
°C
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
JEDEC
―
operating temperature/current/voltage, etc.) are within the
JEITA
―
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
TOSHIBA
2-2H1A
Toshiba Semiconductor Reliability Handbook (“Handling
Weight: 2.4 mg (typ.)
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Transition frequency
Insertion gain
Output capacitance
Reverse transfer capacitance
Collector-base time constant
ICBO
IEBO
VCB = 10 V, IE = 0
VEB = 1 V, IC = 0
hFE
(Note 1)
VCE = 5 V, IC = 5 mA
fT
⎪S21e⎪2
VCE = 5 V, IC = 5 mA
VCE = 5 V, IC = 5 mA, f = 1 GHz
Cob
Cre
Cc・rbb’
VCB = 5 V, IE = 0, f = 1 MHz (Note 2)
VCB = 5 V, IC = 3 mA, f = 30 MHz
⎯
⎯
80
3
6
⎯
⎯
⎯
⎯ 1 μA
⎯ 1 μA
⎯ 240
5 ⎯ GHz
10 ⎯ dB
0.9 ⎯ pF
0.7 1.1 pF
6 15 ps
Note 1: hFE classification O: 80 to 160, Y: 120 to 240
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
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2SC5111
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2SC5111
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