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C5458 PDF даташит

Спецификация C5458 изготовлена ​​​​«Toshiba» и имеет функцию, называемую «NPN Transistor - 2SC5458».

Детали детали

Номер произв C5458
Описание NPN Transistor - 2SC5458
Производители Toshiba
логотип Toshiba логотип 

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C5458 Даташит, Описание, Даташиты
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5458
High Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
DC-AC Inverter Applications
2SC5458
Unit: mm
Excellent switching times: tr = 0.5 µs (max)
tf = 0.3 µs (max) (IC = 0.4 A)
High collector breakdown voltage: VCEO = 400 V
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Rating
600
400
7
0.8
1.5
0.5
1.0
10
150
55 to 150
Unit
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
1 2005-02-01









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C5458 Даташит, Описание, Даташиты
2SC5458
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector emitter saturation voltage
Base-emitter saturation voltage
Symbol
Test Condition
ICBO
IEBO
V (BR) CBO
V (BR) CEO
hFE
VCE (sat)
VBE (sat)
VCB = 480 V, IE = 0
VEB = 7 V, IC = 0
IC = 1 mA, IE = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 1 mA
VCE = 5 V, IC = 0.1 A
IC = 0.3 A, IB = 0.04 A
IC = 0.3 A, IB = 0.04 A
Min Typ. Max Unit
― ― 100 µA
― ― 100 µA
600
V
400
V
20 ― ―
30 80
― ― 1.0 V
― ― 1.3 V
Turn-on time
Switching time Storage time
tr
20 µs
IB1
OUTPUT
0.5
INPUT
tstg IB2 IB2
― ― 2.0 µs
VCC 240 V
Fall time
tf IB1 = 50 mA, IB2 = 100 mA
DUTY CYCLE 1%
― ― 0.3
Marking
C5458
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2005-02-01









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C5458 Даташит, Описание, Даташиты
1000
800
Common emitter
Tc = 25°C
100
IC – VCE
600
400
200
80
60
40
30
20
10
IB = 5 mA
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
1000
Common emitter
VCE = 5 V
300
IC – VBE
100
30
10
3 Tc = 100°C
25 55
1
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-emitter voltage VBE (V)
2SC5458
hFE – IC
300
100
Tc = 100°C
30 25
55
10
3 Common emitter
VCE = 5 V
11 3 10 30 100 300
Collector current IC (mA)
1000
800
Common emitter
VCE = 5 V
600
IC – VBE
400
200
Tc = 100°C
25 55
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-emitter voltage VBE (V)
10
3
1
0.3
0.1
0.05
1
VBE (sat) – IC
Common emitter
IC/IB = 10
25 55
Tc = 100°C
3 10 30 100 300
Collector current IC (mA)
1000
10
3
1
0.3
0.1
0.05
1
VBE (sat) – IC
Common emitter
IC/IB = 5
25 55
Tc = 100°C
3 10 30 100 300
Collector current IC (mA)
1000
3 2005-02-01










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