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C5465 PDF даташит

Спецификация C5465 изготовлена ​​​​«Toshiba» и имеет функцию, называемую «NPN Transistor - 2SC5465».

Детали детали

Номер произв C5465
Описание NPN Transistor - 2SC5465
Производители Toshiba
логотип Toshiba логотип 

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C5465 Даташит, Описание, Даташиты
2SC5465
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5465
Switching Regulator and High Voltage Switching
Applications
High Speed DC-DC Converter Applications
Industrial Applications
Unit: mm
Excellent switching times: tr = 0.7 µs (max)
tf = 0.5 µs (max) (IC = 0.08 A)
High collector breakdown voltage: VCEO = 800 V
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Rating
900
800
7
0.8
1.5
0.2
1.0
20
150
55 to 150
Unit
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
1 2005-02-01









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C5465 Даташит, Описание, Даташиты
2SC5465
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector emitter saturation voltage
Base-emitter saturation voltage
Symbol
Test Condition
ICBO
IEBO
V (BR) CBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
VCB = 800 V, IE = 0
VEB = 7 V, IC = 0
IC = 1 mA, IE = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 1 mA
VCE = 5 V, IC = 0.08 A
IC = 0.3 A, IB = 0.06 A
IC = 0.3 A, IB = 0.06 A
Min Typ. Max Unit
― ― 100 µA
――
1 mA
900
V
800
V
10 ― ―
15 ― ―
― ― 1.0 V
― ― 1.3 V
Rise time
Switching time Storage time
Fall time
tr
20 µs
IB1
OUTPUT
0.7
INPUT
tstg
IB2
IB2
VCC 400 V
3.0 µs
tf IB1 = 0.06 A, IB2 = 0.12 A,
DUTY CYCLE 1%
― ― 0.5
Marking
C5465
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2005-02-01









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C5465 Даташит, Описание, Даташиты
2SC5465
1000
Common emitter
Tc = 25°C
800
120
600
IC – VCE
400
200
100
80
60
40
30
20
10
IB = 5 mA
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
VCE (sat) – IC
3
1
0.3
Tc = 100°C
0.1
55 25
0.03
Common emitter
IC/IB = 5
0.01
1 3 10 30 100 300
Collector current IC (mA)
1000
IC – VBE
800
Common emitter
VCE = 5 V
600
400
200
Tc = 100°C
25 55
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-emitter voltage VBE (V)
hFE – IC
300
100
Tc = 100°C
30
25
55
10
3
Common emitter
VCE = 5 V
1
1 3 10
30
100 300
Collector current IC (mA)
1000
10
3
1
0.3
0.1
0.05
1
VBE (sat) – IC
Common emitter
IC/IB = 5
25 55
Tc = 100°C
3 10 30 100 300
Collector current IC (mA)
1000
Safe Operating Area
3
IC max (pulsed)*
1
IC max
(continuous)
0.3
1 ms*
10 µs*
100 µs*
DC operation
Tc = 25°C
0.1
10 ms*
0.03 100 ms*
0.01
*: Single nonrepetitive pulse
Tc = 25°C
0.003 Curves must be derated
linearly with increase in
temperature.
0.001
10
30
100
300
VCEO max
1000
3000
Collector-emitter voltage VCE (V)
3 2005-02-01










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