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C5275 PDF даташит

Спецификация C5275 изготовлена ​​​​«Sanyo» и имеет функцию, называемую «NPN Transistor - 2SC5275».

Детали детали

Номер произв C5275
Описание NPN Transistor - 2SC5275
Производители Sanyo
логотип Sanyo логотип 

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C5275 Даташит, Описание, Даташиты
Ordering number:EN5185
NPN Epitaxial Planar Silicon Transistor
2SC5275
UHF to S Band Low-Noise Amplifier,
OSC Applications
Features
· Low noise : NF=0.9dB typ (f=1GHz).
: NF=1.4dB typ (f=1.5GHz).
· High gain : S21e2=10dB typ (f=1.5GHz).
· High cutoff frequency : fT=11GHz typ.
· Low-voltage, low-current operation
(VCE=1V, IC=1mA)
: fT=7GHz type.
: S21e2=5.5dB typ (f=1.5GHz).
Package Dimensions
unit:mm
2018B
[2SC5275]
0.4
3
0.16
0 to 0.1
Specifications
1 0.95 0.95 2
1.9
2.9
1 : Base
2 : Emitter
3 : Collector
SANYO : CP
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Conditions
Ratings
20
10
1.5
30
200
150
–55 to +150
Unit
V
V
V
mA
mW
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
ICBO
IEBO
hFE
fT1
fT2
Cob
Reverse Transfer Capacitance
Cre
* : The 2SC5275 is classified by 10mA hFE as follows :
60 3 120 90 4 180 135 5 270
Marking : MN
hFE rank : 3, 4, 5
VCB=10V, IE=0
VEB=1V, IC=0
VCE=5V, IC=10mA
VCE=5V, IC=10mA
VCE=1V, IC=1mA
VCB=10V, f=1MHz
VCB=10V, f=1MHz
Ratings
min typ max
Unit
1.0 µA
10 µA
60* 270*
8 11
GHz
7 GHz
0.45 0.7 pF
0.30 pF
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
21599TH (KT)/83095YK (KOTO) TA-0414 No.5185–1/5









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C5275 Даташит, Описание, Даташиты
Continued from preceding page.
Parameter
Forward Transfer Gain
Noise Figure
2SC5275
Symbol
Conditions
| S21e |2 1
| S21e |2 2
NF1
NF2
VCE=5V, IC=10mA, f=1.5GHz
VCE=1V, IC=1mA, f=1.5GHz
VCE=5V, IC=5mA, f=1.5GHz
VCE=2V, IC=3mA, f=1GHz
Ratings
min typ
8 10
5.5
1.4
0.9
max
3.0
Unit
dB
dB
dB
dB
No.5185–2/5









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C5275 Даташит, Описание, Даташиты
2SC5275
S Parameters
No.5185–3/5










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