DataSheet26.com

C5089 PDF даташит

Спецификация C5089 изготовлена ​​​​«Toshiba» и имеет функцию, называемую «NPN Transistor - 2SC5089».

Детали детали

Номер произв C5089
Описание NPN Transistor - 2SC5089
Производители Toshiba
логотип Toshiba логотип 

7 Pages
scroll

No Preview Available !

C5089 Даташит, Описание, Даташиты
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5089
2SC5089
VHF~UHF Band Low Noise Amplifier Applications
Low noise figure, high gain.
NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 20 V
Collector-emitter voltage
VCEO 10 V
Emitter-base voltage
VEBO 1.5 V
Base current
IB 20 mA
Collector current
IC 40 mA
Collector power dissipation
PC 150 mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
S-MINI
JEDEC
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 12mg (typ.)
1 2010-02-17









No Preview Available !

C5089 Даташит, Описание, Даташиты
2SC5089
Microwave Characteristics (Ta = 25°C)
Characteristics
Transition frequency
Insertion gain
Noise figure
Symbol
Test Condition
fT
S21e2 (1)
S21e2 (2)
NF (1)
NF (2)
VCE = 8 V, IC = 20 mA
VCE = 8 V, IC = 20 mA, f = 1 GHz
VCE = 8 V, IC = 20 mA, f = 2 GHz
VCE = 8 V, IC = 5 mA, f = 1 GHz
VCE = 8 V, IC = 5 mA, f = 2 GHz
Min Typ. Max Unit
7 10 GHz
10 13
dB
7
1.1 2.5
dB
1.7
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
ICBO
VCB = 10 V, IE = 0
IEBO
VEB = 1 V, IC = 0
hFE
(Note 1)
VCE = 8 V, IC = 20 mA
⎯ ⎯ 1 μA
⎯ ⎯ 1 μA
50 160
Output capacitance
Reverse transfer capacitance
Cob
0.7
VCB = 10 V, IE = 0, f = 1 MHz (Note 2)
pF
Cre 0.5 1.0 pF
Note 1: hFE classification R: 50 to 100, O: 80 to 160
Note 2: Cre is measured by 3 terminal method with capacitance bridge.
Marking
2 2010-02-17









No Preview Available !

C5089 Даташит, Описание, Даташиты
2SC5089
3 2010-02-17










Скачать PDF:

[ C5089.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
C5084NPN Transistor - 2SC5084Toshiba
Toshiba
C5085NPN Transistor - 2SC5085Toshiba
Toshiba
C5086Transistor Silicon NPN Epitaxial Planar TypeToshiba Semiconductor
Toshiba Semiconductor
C5087NPN Transistor - 2SC5087Toshiba
Toshiba

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск