DataSheet26.com

C2290 PDF даташит

Спецификация C2290 изготовлена ​​​​«Toshiba» и имеет функцию, называемую «NPN Transistor - 2SC2290».

Детали детали

Номер произв C2290
Описание NPN Transistor - 2SC2290
Производители Toshiba
логотип Toshiba логотип 

3 Pages
scroll

No Preview Available !

C2290 Даташит, Описание, Даташиты
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE
2SC2290
2SC2290
2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS
(LOW SUPPLY VOLTAGE USE)
l Specified 12.5V, 28MHz Characteristics
l Output Power
: Po = 60WPEP (Min.)
l Power Gain
: Gp = 11.8dB (Min.)
l Collector Efficiency
: ηC = 35% (Min.)
l Intermodulation Distortion: IMD = 30dB (Max.)
MAXIMUM RATINGS (Tc = 25°C)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
PC
Tj
Tstg
RATING
45
45
18
4
20
175
175
65~175
UNIT
V
V
V
V
A
W
°C
°C
JEDEC
EIAJ
TOSHIBA
Weight: 5.2g
Unit in mm
213B1A
000707EAA1
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the
buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and
to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or
damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the
most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling
Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy
control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
· The information contained herein is subject to change without notice.
2001-01-31 1/3









No Preview Available !

C2290 Даташит, Описание, Даташиты
2SC2290
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector Output Capacitance
Power Gain
Input Power
Collector Efficiency
Intermodulation Distortion
Series Equivalent Input Impedance
Series Equivalent Output Impedance
SYMBOL
TEST CONDITION
V (BR) CEO
V (BR) CES
V (BR) EBO
hFE
Cob
Gp
Pi
ηC
IMD
IC = 100mA, IB = 0
IC = 100mA, VEB = 0
IE = 1mA, IC = 0
VCE = 5V, IC = 10A *
VCB = 12.5V, IE = 0
f = 1MHz
VCC = 12.5V, f1 = 28.000MHz,
f2 = 28.001MHz
Iidle = 50mA
Po = 60WPEP (Fig.)
Zin VCC = 12.5V, f1 = 28.000MHz,
f2 = 28.001MHz
Zout Po = 60WPEP
* Pulse Test: Pulse Width 100µs, Duty Cycle 3%
MIN. TYP. MAX. UNIT
18 — — V
45 — — V
4 —— V
10 — 150 —
— — 500 pF
11.8 13.8 —
dB
— 2.5
4 WPEP
35 — — %
— — 30 dB
1.02
j0.17
0.86
j0.21
CAUTION
Beryllia Ceramics is used in this product. The dust or vapor can be dangerous to humans. Do not break, cut, crush
or dissolve chemically. Dispose of this product properly according to law. Do not intermingle with normal industrial
or domestic waste.
2001-01-31 2/3









No Preview Available !

C2290 Даташит, Описание, Даташиты
Fig. Pi TEST CIRCUIT
2SC2290
CAUTION
These are only typical curves and devices are not necessarily guaranteed at these curves.
2001-01-31 3/3










Скачать PDF:

[ C2290.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
C2290NPN Transistor - 2SC2290Toshiba
Toshiba
C2295NPN Transistor - 2SC2295Panasonic
Panasonic
C229ASilicon Controlled RectifiersMotorola Semiconductors
Motorola Semiconductors
C229ASILICON CONTROLLED RECTIFIERDigitron Semiconductors
Digitron Semiconductors

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск