(PDF) C2982 Datasheet - NPN Transistor

Número de pieza	C2982
Descripción	NPN Transistor - 2SC2982
Fabricantes	Toshiba
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No Preview Available ! TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2982 Storobo Flash Applications Medium Power Amplifier Applications 2SC2982 Unit: mm • High DC current gain and excellent linearity : hFE (1) = 140 to 600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 140 (typ.), (VCE = 1 V, IC = 2 A) • Low saturation voltage : VCE (sat) = 0.5 V (max) (IC = 2 A, IB = 50 mA) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SA1314 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse (Note 1) Base current DC Pulse (Note 1) Collector power dissipation Junction temperature Storage temperature range VCBO VCES VCEO VEBO IC ICP IB IBP PC PC (Note 2) Tj Tstg 30 30 10 6 2 4 0.4 0.8 500 1000 150 −55 to 150 V V V A A mW °C °C Note 1: Pulse test: Pulse width = 10 ms (max), duty cycle = 30% (max) Note 2: 2SC2982 mounted on a ceramic substrate (250 mm2 × 0.8 t) JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.) 1 2004-07-07 1 page

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PDF C2982 Data sheet ( Hoja de datos )