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C2881 PDF даташит

Спецификация C2881 изготовлена ​​​​«Toshiba» и имеет функцию, называемую «NPN Transistor - 2SC2881».

Детали детали

Номер произв C2881
Описание NPN Transistor - 2SC2881
Производители Toshiba
логотип Toshiba логотип 

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C2881 Даташит, Описание, Даташиты
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2881
Voltage Amplifier Applications
Power Amplifier Applications
2SC2881
Unit: mm
High voltage: VCEO = 120 V
High transition frequency: fT = 120 MHz (typ.)
Small flat package
PC = 1.0 to 2.0 W (mounted on ceramic substrate)
Complementary to 2SA1201
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
PC
(Note 1)
Tj
Tstg
120
120
5
800
160
500
1000
150
55 to 150
V
V
V
mA
mA
mW
°C
°C
PW-MINI
JEDEC
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
1980-07
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C2881 Даташит, Описание, Даташиты
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 120 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
V (BR) EBO IE = 1 mA, IC = 0
hFE
(Note 3)
VCE = 5 V, IC = 100 mA
VCE (sat)
VBE
fT
Cob
IC = 500 mA, IB = 50 mA
VCE = 5 V, IC = 500 mA
VCE = 5 V, IC = 100 mA
VCB = 10 V, IE = 0, f = 1 MHz
Note 3: hFE classification O: 80 to 160, Y: 120 to 240
Marking
C
Lot No.
Part No. (or abbreviation code)
Characteristics indicator
Note 4
2SC2881
Min Typ. Max Unit
― ― 0.1 μA
― ― 0.1 μA
120
V
5 ―― V
80 240
― ― 1.0 V
― ― 1.0 V
120 MHz
― ― 30 pF
Note 4: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8
June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
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C2881 Даташит, Описание, Даташиты
800
50
600
20
IC – VCE
10 Common emitter
Ta = 25°C
5
400
200
0
0
3
2
IB = 1 mA
0
4 8 12
Collector-emitter voltage VCE (V)
16
2SC2881
1000
500
300
100
50
30
hFE – IC
Common emitter
VCE = 5 V
Ta = 100°C
25
25
10
3 10 30 100 300 1000
Collector current IC (mA)
VCE (sat) – IC
1
Common emitter
IC/IB = 10
0.5
0.3
0.1
0.05
0.03
3
Ta = 100°C
25
25
10 30 100 300
Collector current IC (mA)
Safe Operating Area
3000
IC max (pulse)*
1000 IC max (continuous)
500
100 ms*
300
10 ms*
1 ms*
1000
100
DC operation Ta = 25°C
50
30
10
*: Single nonrepetitive pulse
5 Ta = 25°C
Curves must be derated
3 linearly with increase in
temperature.
Tested without a substrate.
1
0.3 1 3 10
VCEO max
30 100
Collector-emitter voltage VCE (V)
300
IC – VBE
1.0
Common emitter
VCE = 5 V
0.8
0.6
0.4
Ta = 100°C 25
25
0.2
0
0 0.2 0.4 0.6 0.8 1.0 1.2
Base-emitter voltage VBE (V)
1.2
(1)
1.0
0.8
PC – Ta
(1) Mounted on a ceramic
substrate (250 mm2 × 0.8 t)
(2) No heat sink
0.6
(2)
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
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