IS45S16800E Datasheet PDF - Integrated Silicon Solution
| Part Number | IS45S16800E | |
| Description | 128Mb SYNCHRONOUS DRAM | |
| Manufacturers | Integrated Silicon Solution | |
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IS45S81600E
IS45S16800E
1162M8Mxb8S, Y8NMCxH1R6O NOUS DRAM DECEMBER 2011
FEATURES
• Clock frequency: 166, 143 MHz
• Fully synchronous; all signals referenced to a
positive clock edge
• Internal bank for hiding row access/precharge
• Power supply
IS45S81600E
Vdd Vddq
3.3V 3.3V
IS45S16800E
3.3V 3.3V
• LVTTL interface
• Programmable burst length
– (1, 2, 4, 8, full page)
• Programmable burst sequence:
Sequential/Interleave
• Auto Refresh (CBR)
• Self Refresh
• 4096 refresh cycles every 16 ms (A2 grade) or
64 ms (A1 grade)
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write
operations capability
• Burst termination by burst stop and precharge
command
• Automotive Temperature Range:
Option A1: -40oC to +85oC
Option A2: -40oC to +105oC
OVERVIEW
ISSI's 128Mb Synchronous DRAM achieves high-speed
data transfer using pipeline architecture. All inputs and
outputs signals refer to the rising edge of the clock input.
The 128Mb SDRAM is organized as follows.
IS45S81600E
4M x8 x4 Banks
54-pin TSOPII
IS45S16800E
2M x16 x4 Banks
54-pin TSOPII
54-ball BGA
KEY TIMING PARAMETERS
Parameter
Clk Cycle Time
CAS Latency = 3
CAS Latency = 2
Clk Frequency
CAS Latency = 3
CAS Latency = 2
Access Time from Clock
CAS Latency = 3
CAS Latency = 2
-6 -7
6 7
10 10
166 143
100 100
5.4 5.4
6.5 6.5
Unit
ns
ns
Mhz
Mhz
ns
ns
Copyright © 2011 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time with-
out notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain
the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be
expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated
Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. — www.issi.com
Rev. E
12/01/2011
1
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IS45S81600E, IS45S16800E
PIN CONFIGURATION
54-ball BGA for x16 (Top View) (8.00 mm x 8.00 mm Body, 0.8 mm Ball Pitch)
package code: 54B (8x8)
123456789
A
B VSS DQ15 VSSQ
C DQ14 DQ13 VDDQ
D DQ12 DQ11 VSSQ
E DQ10 DQ9 VDDQ
F DQ8 NC VSS
G DQMH CLK CKE
H NC A11 A9
J A8 A7 A6
VSS A5 A4
VDDQ DQ0 VDD
VSSQ DQ2 DQ1
VDDQ DQ4 DQ3
VSSQ DQ6 DQ5
VDD DQML DQ7
CAS RAS WE
BA0 BA1 CS
A0 A1 A10
A3 A2 VDD
PIN DESCRIPTIONS
A0-A11
Row Address Input
A0-A8
Column Address Input
BA0, BA1
Bank Select Address
DQ0 to DQ15 Data I/O
CLK
System Clock Input
CKE
Clock Enable
CS
Chip Select
RAS
Row Address Strobe Command
CAS
Column Address Strobe Command
WE
DQML
DQMH
Vdd
Vss
Vddq
Vssq
NC
Write Enable
x16 Lower Byte Input/Output Mask
x16 Upper Byte Input/Output Mask
Power
Ground
Power Supply for I/O Pin
Ground for I/O Pin
No Connection
Integrated Silicon Solution, Inc. — www.issi.com
Rev. E
12/01/2011
5
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for IS45S16800E electronic component. |
| Information | Total 30 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ IS45S16800E.PDF Datasheet ] | |
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