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D2414 PDF даташит

Спецификация D2414 изготовлена ​​​​«Toshiba» и имеет функцию, называемую «NPN Transistor - 2SD2414».

Детали детали

Номер произв D2414
Описание NPN Transistor - 2SD2414
Производители Toshiba
логотип Toshiba логотип 

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D2414 Даташит, Описание, Даташиты
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2414(SM)
2SD2414(SM)
High Current Switching Applications
Power Amplifier Applications
Unit: mm
· Low collector saturation voltage: VCE (sat) = 0.5 V (max) (at IC = 4 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
100
80
5
7
1
1.5
40
150
55 to 150
Unit
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-10S2
Weight: 1.4 g (typ.)
1 2003-02-04









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D2414 Даташит, Описание, Даташиты
2SD2414(SM)
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Switching time Storage time
Fall time
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
fT
Cob
VCB = 100 V, IE = 0
VEB = 5 V, IC = 0
IC = 50 mA, IB = 0
VCE = 1 V, IC = 1 A
VCE = 1 V, IC = 4 A
IC = 4 A, IB = 0.4 A
IC = 4 A, IB = 0.4 A
VCE = 4 V, IC = 1 A
VCB = 10 V, IE = 0, f = 1 MHz
ton
20 µs
Input IB1
Output
tstg IB2
VCC 30 V
tf
IB1 = IB2 = 0.3 A, duty cycle 1%
Min Typ. Max Unit
― ― 5 µA
― ― 5 µA
80 ― ―
V
100 320
30 ― ―
0.25 0.5
V
0.9 1.4 V
10 MHz
200
pF
0.4
2.5 µs
0.5
Marking
D2414
Product No.
Lot No.
Explanation of Lot No.
Month of manufacture (January to December are denoted by letters A to L respectively.)
Year of manufacture (Last decimal digit of the year of manufacture)
2 2003-02-04









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D2414 Даташит, Описание, Даташиты
IC – VCE
8
160 100 80
Common emitter
Tc = 25°C
6 60
40
4
30
20
2
IB = 10 mA
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
VCE – IC
1.2
Common emitter
Tc = 100°C
1.0
IB = 20 mA
0.8
100 200
0.6
0.4
700
0.2
300
400
500
600
0
0 12 34567
Collector current IC (A)
2SD2414(SM)
VCE – IC
1.2
Common emitter
Tc = 25°C
1.0
60 100 150 200 300 400
0.8
IB = 30 mA
0.6
0.4 500
600
700
0.2
0
012345678
Collector current IC (A)
VCE – IC
1.2
Common emitter
Tc = 55°C
1.0
0.8 IB = 30 mA
60 100
0.6
150 200 300 400
0.4
500
700 600
0.2
0
012345678
Collector current IC (A)
hFE – IC
500
Common emitter
300 VCE = 1 V
Tc = 100°C
25
100
50 55
30
10
5
0.03
0.1 0.3 1 3
Collector current IC (A)
10
VCE (sat) – IC
2
Common emitter
1 IC/IB = 10
0.5
0.3
0.1
0.05
0.02
0.02
Tc = 100°C
25 55
0.1 0.3
1
3
Collector current IC (A)
10
3 2003-02-04










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Номер в каталогеОписаниеПроизводители
D2414NPN Transistor - 2SD2414Toshiba
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