D2414 PDF даташит
Спецификация D2414 изготовлена «Toshiba» и имеет функцию, называемую «NPN Transistor - 2SD2414». |
|
Детали детали
Номер произв | D2414 |
Описание | NPN Transistor - 2SD2414 |
Производители | Toshiba |
логотип |
5 Pages
No Preview Available ! |
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2414(SM)
2SD2414(SM)
High Current Switching Applications
Power Amplifier Applications
Unit: mm
· Low collector saturation voltage: VCE (sat) = 0.5 V (max) (at IC = 4 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
100
80
5
7
1
1.5
40
150
−55 to 150
Unit
V
V
V
A
A
W
°C
°C
JEDEC
―
JEITA
―
TOSHIBA
2-10S2
Weight: 1.4 g (typ.)
1 2003-02-04
No Preview Available ! |
2SD2414(SM)
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn-on time
Switching time Storage time
Fall time
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
fT
Cob
VCB = 100 V, IE = 0
VEB = 5 V, IC = 0
IC = 50 mA, IB = 0
VCE = 1 V, IC = 1 A
VCE = 1 V, IC = 4 A
IC = 4 A, IB = 0.4 A
IC = 4 A, IB = 0.4 A
VCE = 4 V, IC = 1 A
VCB = 10 V, IE = 0, f = 1 MHz
ton
20 µs
Input IB1
Output
tstg IB2
VCC ≈ 30 V
tf
IB1 = −IB2 = 0.3 A, duty cycle ≤ 1%
Min Typ. Max Unit
― ― 5 µA
― ― 5 µA
80 ― ―
V
100 ― 320
30 ― ―
― 0.25 0.5
V
― 0.9 1.4 V
― 10 ― MHz
― 200 ―
pF
― 0.4 ―
― 2.5 ― µs
― 0.5 ―
Marking
D2414
Product No.
Lot No.
Explanation of Lot No.
Month of manufacture (January to December are denoted by letters A to L respectively.)
Year of manufacture (Last decimal digit of the year of manufacture)
2 2003-02-04
No Preview Available ! |
IC – VCE
8
160 100 80
Common emitter
Tc = 25°C
6 60
40
4
30
20
2
IB = 10 mA
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
VCE – IC
1.2
Common emitter
Tc = 100°C
1.0
IB = 20 mA
0.8
100 200
0.6
0.4
700
0.2
300
400
500
600
0
0 12 34567
Collector current IC (A)
2SD2414(SM)
VCE – IC
1.2
Common emitter
Tc = 25°C
1.0
60 100 150 200 300 400
0.8
IB = 30 mA
0.6
0.4 500
600
700
0.2
0
012345678
Collector current IC (A)
VCE – IC
1.2
Common emitter
Tc = −55°C
1.0
0.8 IB = 30 mA
60 100
0.6
150 200 300 400
0.4
500
700 600
0.2
0
012345678
Collector current IC (A)
hFE – IC
500
Common emitter
300 VCE = 1 V
Tc = 100°C
25
100
50 −55
30
10
5
0.03
0.1 0.3 1 3
Collector current IC (A)
10
VCE (sat) – IC
2
Common emitter
1 IC/IB = 10
0.5
0.3
0.1
0.05
0.02
0.02
Tc = 100°C
25 −55
0.1 0.3
1
3
Collector current IC (A)
10
3 2003-02-04
Скачать PDF:
[ D2414.PDF Даташит ]
Номер в каталоге | Описание | Производители |
D2414 | NPN Transistor - 2SD2414 | Toshiba |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |