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FP35R12W2T4 PDF даташит

Спецификация FP35R12W2T4 изготовлена ​​​​«Infineon» и имеет функцию, называемую «IGBT Module».

Детали детали

Номер произв FP35R12W2T4
Описание IGBT Module
Производители Infineon
логотип Infineon логотип 

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FP35R12W2T4 Даташит, Описание, Даташиты
Technische Information / technical information
IGBT-Module
IGBT-modules
FP35R12W2T4
EasyPIM™ Modul mit schnellem Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC
EasyPIM™ module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
Vorläufige Daten / preliminary data
V†Š» = 1200V
I† ÒÓÑ = 35A / I†ç¢ = 70A
Typische Anwendungen
Hilfsumrichter
Klimaanlagen
Motorantriebe
Elektrische Eigenschaften
Niedrige Schaltverluste
Trench IGBT 4
V†ŠÙÈÚ mit positivem Temperaturkoeffizienten
niedriges V†ŠÙÈÚ
Mechanische Eigenschaften
AlèOé Substrat für kleinen thermischen
Widerstand
Kompaktes Design
Lötverbindungs Technologie
Robuste Montage durch integrierte
Befestigungsklammern
Typical Applications
Auxiliary Inverters
Airconditions
Motor Drives
Electrical Features
Low Switching Losses
Trench IGBT 4
V†ŠÙÈÚ with positive Temperature Coefficient
Low V†ŠÙÈÚ
Mechanical Features
AlèOé Substrate for Low Thermal Resistance
Compact Design
Solder Contact Technology
Rugged mounting due to integrated mounting
clamps
Module Label Code
Barcode Code 128
DMX - Code
prepared by: DK
approved by: MB
Content of the Code
Module Serial Number
Module Material Number
Production Order Number
Datecode (Production Year)
Datecode (Production Week)
date of publication: 2009-10-19
revision: 2.2
material no: 29155
UL approved (E83335)
1
Digit
1- 5
6 - 11
12 - 19
20 - 21
22 - 23









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FP35R12W2T4 Даташит, Описание, Даташиты
Technische Information / technical information
IGBT-Module
IGBT-modules
FP35R12W2T4
IGBT-Wechselrichter / IGBT-inverter
Höchstzulässige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
TÝÎ = 25°C
Kollektor-Dauergleichstrom
DC-collector current
T† = 100°C, TÝÎ = 175°C
T† = 25°C, TÝÎ = 175°C
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t« = 1 ms
Gesamt-Verlustleistung
total power dissipation
T† = 25°C, TÝÎ = 175°C
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Vorläufige Daten
preliminary data
V†Š»
I† ÒÓÑ
I†
I†ç¢
PÚÓÚ
V•Š»
1200
35
54
70
215
+/-20
V
A
A
A
W
V
Charakteristische Werte / characteristic values
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
I† = 35 A, V•Š = 15 V
I† = 35 A, V•Š = 15 V
I† = 35 A, V•Š = 15 V
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
Gate-Schwellenspannung
gate threshold voltage
I† = 1,20 mA, V†Š = V•Š, TÝÎ = 25°C
Gateladung
gate charge
V•Š = -15 V ... +15 V
Interner Gatewiderstand
internal gate resistor
TÝÎ = 25°C
Eingangskapazität
input capacitance
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
Rückwirkungskapazität
reverse transfer capacitance
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
Kollektor-Emitter Reststrom
collector-emitter cut-off current
V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C
Gate-Emitter Reststrom
gate-emitter leakage current
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C
Einschaltverzögerungszeit (ind. Last)
turn-on delay time (inductive load)
I† = 35 A, V†Š = 600 V
V•Š = ±15 V
R•ÓÒ = 12 Â
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
Anstiegszeit (induktive Last)
rise time (inductive load)
I† = 35 A, V†Š = 600 V
V•Š = ±15 V
R•ÓÒ = 12 Â
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
Abschaltverzögerungszeit (ind. Last)
turn-off delay time (inductive load)
I† = 35 A, V†Š = 600 V
V•Š = ±15 V
R•ÓËË = 12 Â
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
Fallzeit (induktive Last)
fall time (inductive load)
I† = 35 A, V†Š = 600 V
V•Š = ±15 V
R•ÓËË = 12 Â
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I† = 35 A, V†Š = 600 V, L» = 35 nH
TÝÎ = 25°C
V•Š = ±15 V, di/dt = 2500 A/µs (TÝÎ=150°C) TÝÎ = 125°C
R•ÓÒ = 12 Â
TÝÎ = 150°C
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I† = 35 A, V†Š = 600 V, L» = 35 nH
TÝÎ = 25°C
V•Š = ±15 V, du/dt = 3600 V/µs (TÝÎ=150°C) TÝÎ = 125°C
R•ÓËË = 12 Â
TÝÎ = 150°C
Kurzschlussverhalten
SC data
V•Š ù 15 V, V†† = 900 V
V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt
t« ù 10 µs, TÝÎ = 150°C
Innerer Wärmewiderstand
thermal resistance, junction to case
pro IGBT / per IGBT
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro IGBT / per IGBT
ð«ÈÙÚþ = 1 W/(m·K) / ðÃØþÈÙþ = 1 W/(m·K)
V†Š ÙÈÚ
V•ŠÚÌ
Q•
R•ÍÒÚ
CÍþÙ
CØþÙ
I†Š»
I•Š»
tÁ ÓÒ
tÁ ÓËË
EÓÒ
EÓËË
IȠ
RÚÌœ†
RÚ̆™
min. typ. max.
1,85 2,25
2,15
2,25
V
V
V
5,2 5,8 6,4 V
0,27 µC
0,0 Â
2,00 nF
0,07 nF
1,0 mA
400 nA
0,025
0,025
0,025
0,013
0,016
0,018
0,24
0,295
0,31
0,115
0,17
0,20
1,90
2,90
3,15
2,00
2,90
3,20
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
mJ
mJ
mJ
mJ
mJ
mJ
130 A
0,60 0,70 K/W
0,60
K/W
prepared by: DK
approved by: MB
date of publication: 2009-10-19
revision: 2.2
2









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FP35R12W2T4 Даташит, Описание, Даташиты
Technische Information / technical information
IGBT-Module
IGBT-modules
FP35R12W2T4
Diode-Wechselrichter / diode-inverter
Höchstzulässige Werte / maximum rated values
Periodische Spitzensperrspannung
repetitive peak reverse voltage
TÝÎ = 25°C
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forward current
t« = 1 ms
Grenzlastintegral
I²t - value
Vç = 0 V, t« = 10 ms, TÝÎ = 125°C
Vç = 0 V, t« = 10 ms, TÝÎ = 150°C
Charakteristische Werte / characteristic values
Durchlassspannung
forward voltage
IŒ = 35 A, V•Š = 0 V
IŒ = 35 A, V•Š = 0 V
IŒ = 35 A, V•Š = 0 V
Rückstromspitze
peak reverse recovery current
IŒ = 35 A, - diŒ/dt = 2500 A/µs (TÝÎ=150°C)
Vç = 600 V
V•Š = -15 V
Sperrverzögerungsladung
recovered charge
IŒ = 35 A, - diŒ/dt = 2500 A/µs (TÝÎ=150°C)
Vç = 600 V
V•Š = -15 V
Abschaltenergie pro Puls
reverse recovery energy
IŒ = 35 A, - diŒ/dt = 2500 A/µs (TÝÎ=150°C)
Vç = 600 V
V•Š = -15 V
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Diode / per diode
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Diode / per diode
ð«ÈÙÚþ = 1 W/(m·K) / ðÃØþÈÙþ = 1 W/(m·K)
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
Vorläufige Daten
preliminary data
Vçç¢
1200
V
IΠ35 A
IŒç¢ 70 A
I²t
240 A²s
220 A²s
min. typ. max.
1,65 2,15 V
VΠ1,65 V
1,65 V
81,0 A
Iç¢ 85,0 A
88,0 A
3,95 µC
QØ 6,80 µC
7,50 µC
1,50 mJ
EØþÊ 2,70 mJ
2,95 mJ
RÚÌœ†
0,80 0,90 K/W
RÚ̆™
0,75
K/W
Diode-Gleichrichter / diode-rectifier
Höchstzulässige Werte / maximum rated values
Periodische Rückw. Spitzensperrspannung
repetitive peak reverse voltage
TÝÎ = 25°C
Durchlassstrom Grenzeffektivwert pro Dio.
forward current RMS maximum per diode
T† = 100°C
Gleichrichter Ausgang Grenzeffektivstrom
maximum RMS current at Rectifier output
T† = 100°C
Stoßstrom Grenzwert
surge forward current
tÔ = 10 ms, TÝÎ = 25°C
tÔ = 10 ms, TÝÎ = 150°C
Grenzlastintegral
I²t - value
tÔ = 10 ms, TÝÎ = 25°C
tÔ = 10 ms, TÝÎ = 150°C
Charakteristische Werte / characteristic values
Durchlassspannung
forward voltage
TÝÎ = 150°C, IŒ = 35 A
Sperrstrom
reverse current
TÝÎ = 150°C, Vç = 1600 V
Innerer Wärmewiderstand
thermal resistance, junction to case
pro Diode
per diode
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Diode / per diode
ð«ÈÙÚþ = 1 W/(m·K) / ðÃØþÈÙþ = 1 W/(m·K)
Vçç¢
1600
V
IŒç¢»¢
60
A
I碻¢
IŒ»¢
I²t
60
450
370
1000
685
A
A
A
A²s
A²s
min. typ. max.
VΠ0,95 V
Iç 1,00 mA
RÚÌœ†
1,05 1,15 K/W
RÚ̆™
0,95
K/W
prepared by: DK
approved by: MB
date of publication: 2009-10-19
revision: 2.2
3










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