B1411 PDF даташит
Спецификация B1411 изготовлена «Toshiba» и имеет функцию, называемую «PNP Transistor - 2SB1411». |
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Детали детали
Номер произв | B1411 |
Описание | PNP Transistor - 2SB1411 |
Производители | Toshiba |
логотип |
5 Pages
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TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SB1411
Switching Applications
Hammer Drive, Pulse Motor Drive Applications
2SB1411
Unit: mm
• High DC current gain: hFE = 1500 (min) (VCE = −3 V, IC = −1 A)
• Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1 A)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−100
V
Collector-emitter voltage
VCEO
−100
V
Emitter-base voltage
VEBO −7 V
Collector current
DC
Peak
IC
−2
A
ICP −3
Base current
IB −0.5 A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
PC
2.0
W
20
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
−55 to 150
°C
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
≈ 7 kΩ
≈ 150 Ω
Emitter
1 2006-11-21
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Electrical Characteristics (Tc = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat) (1)
VCE (sat) (2)
VBE (sat)
VCB = −100 V, IE = 0
VEB = −6 V, IC = 0
IC = −30 mA, IB = 0
VCE = −3 V, IC = −1 A
VCE = −3 V, IC = −2 A
IC = −1 A, IB = −2 mA
IC = −2 A, IB = −8 mA
IC = −1 A, IB = −2 mA
2SB1411
Min
―
―
−100
1500
1000
―
―
―
Typ. Max
― −100
― −2.5
――
― 15000
――
― −1.5
― −2.5
― −2.2
Unit
μA
mA
V
V
V
Turn-on time
Switching time Storage time
Fall time
ton
IB2
Output
― 1.0 ―
Input IB1
tstg
― 3.0 ―
μs
VCC ≈ −30 V
20 μs
tf
−IB1 = IB2 = 2 mA, duty cycle ≤ 1%
― 2.0 ―
Marking
B1411
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2006-11-21
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IC – VCE
−4
Common emitter
−4.0
−3
−6.0
−2.0
Tc = 25°C
−1.0
−2
−0.6
−0.4
−1
IB = −0.2 mA
0
0 −2 −4 −6 −8 −10
Collector-emitter voltage VCE (V)
10000
5000
3000
1000
500
300
hFE – IC
Tc = 100°C
25
Common emitter
VCE = −3 V
−55
100
−0.05 −0.1
−0.3 −0.5 −1
−3 −5
Collector current IC (A)
−10 −20
2SB1411
−3.0
Common emitter
−2.5 VCE = −3 V
IC – VBE
−2.0
−1.5
Tc = 100°C 25
−55
−1.0
−0.5
0
0 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 −2.8 −3.2
Base-emitter voltage VBE (V)
−2.4
−2.0
−1.6
−1.2
−0.8
−0.4
VCE – IB
Common emitter
Tc = 25°C
IC = −2.0 A
−1.5
−1.0
−0.5
−0.1
0
−0.1
−0.3 −0.5 −1
−3 −5 −10
Base current IB (mA)
−30
VCE (sat) – IC
−10
Common emitter
IC/IB = 250
−5
−3
−1
−0.5
−0.1
Tc = −55°C
25
100
−0.3 −0.5
−1
Collector current IC (A)
−3 −5
−10
−5
−3
−1
−0.5
−0.1
VBE (sat) – IC
Common emitter
IC/IB = 250
Tc = −55°C
25
100
−0.3 −0.5
−1
Collector current IC (A)
−3 −5
3 2006-11-21
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