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B1411 PDF даташит

Спецификация B1411 изготовлена ​​​​«Toshiba» и имеет функцию, называемую «PNP Transistor - 2SB1411».

Детали детали

Номер произв B1411
Описание PNP Transistor - 2SB1411
Производители Toshiba
логотип Toshiba логотип 

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B1411 Даташит, Описание, Даташиты
TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SB1411
Switching Applications
Hammer Drive, Pulse Motor Drive Applications
2SB1411
Unit: mm
High DC current gain: hFE = 1500 (min) (VCE = 3 V, IC = 1 A)
Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
100
V
Collector-emitter voltage
VCEO
100
V
Emitter-base voltage
VEBO 7 V
Collector current
DC
Peak
IC
2
A
ICP 3
Base current
IB 0.5 A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
PC
2.0
W
20
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
55 to 150
°C
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
Collector
Base
7 k
150
Emitter
1 2006-11-21









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B1411 Даташит, Описание, Даташиты
Electrical Characteristics (Tc = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat) (1)
VCE (sat) (2)
VBE (sat)
VCB = 100 V, IE = 0
VEB = 6 V, IC = 0
IC = 30 mA, IB = 0
VCE = 3 V, IC = 1 A
VCE = 3 V, IC = 2 A
IC = 1 A, IB = 2 mA
IC = 2 A, IB = 8 mA
IC = 1 A, IB = 2 mA
2SB1411
Min
100
1500
1000
Typ. Max
― −100
― −2.5
――
15000
――
― −1.5
― −2.5
― −2.2
Unit
μA
mA
V
V
V
Turn-on time
Switching time Storage time
Fall time
ton
IB2
Output
1.0
Input IB1
tstg
3.0
μs
VCC ≈ −30 V
20 μs
tf
IB1 = IB2 = 2 mA, duty cycle 1%
2.0
Marking
B1411
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2006-11-21









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B1411 Даташит, Описание, Даташиты
IC – VCE
4
Common emitter
4.0
3
6.0
2.0
Tc = 25°C
1.0
2
0.6
0.4
1
IB = 0.2 mA
0
0 2 4 6 8 10
Collector-emitter voltage VCE (V)
10000
5000
3000
1000
500
300
hFE – IC
Tc = 100°C
25
Common emitter
VCE = 3 V
55
100
0.05 0.1
0.3 0.5 1
3 5
Collector current IC (A)
10 20
2SB1411
3.0
Common emitter
2.5 VCE = 3 V
IC – VBE
2.0
1.5
Tc = 100°C 25
55
1.0
0.5
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
Base-emitter voltage VBE (V)
2.4
2.0
1.6
1.2
0.8
0.4
VCE – IB
Common emitter
Tc = 25°C
IC = 2.0 A
1.5
1.0
0.5
0.1
0
0.1
0.3 0.5 1
3 5 10
Base current IB (mA)
30
VCE (sat) – IC
10
Common emitter
IC/IB = 250
5
3
1
0.5
0.1
Tc = 55°C
25
100
0.3 0.5
1
Collector current IC (A)
3 5
10
5
3
1
0.5
0.1
VBE (sat) – IC
Common emitter
IC/IB = 250
Tc = 55°C
25
100
0.3 0.5
1
Collector current IC (A)
3 5
3 2006-11-21










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