NTB5860NL PDF даташит
Спецификация NTB5860NL изготовлена «ON Semiconductor» и имеет функцию, называемую «N-Channel Power MOSFET / Transistor». |
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Детали детали
Номер произв | NTB5860NL |
Описание | N-Channel Power MOSFET / Transistor |
Производители | ON Semiconductor |
логотип |
7 Pages
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NTB5860NL, NTP5860NL,
NVB5860NL
N-Channel Power MOSFET
60 V, 220 A, 3.0 mW
Features
• Low RDS(on)
• High Current Capability
• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant
• NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Continuous Drain
Current, RqJC
Steady
State
TA = 25°C
TA = 100°C
Power Dissipation,
RqJC
Steady
State
TA = 25°C
Pulsed Drain Current
tp = 10 ms
Current Limited by Package
Operating and Storage Temperature Range
VDSS
VGS
ID
PD
IDM
IDMmax
TJ, Tstg
60
$20
220
156
283
660
130
−55 to
+175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (L = 0.3 mH)
IS 130
EAS 735
Lead Temperature for Soldering
Purposes (1/8″ from Case for 10 Seconds)
TL 260
Unit
V
V
A
W
A
A
°C
A
mJ
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Case (Drain) Steady State
RqJC
0.53 °C/W
Junction−to−Ambient − Steady State (Note 1)
RqJA
28
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
© Semiconductor Components Industries, LLC, 2012
Augsut, 2012 − Rev. 1
1
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V(BR)DSS
60 V
RDS(on) MAX
3.0 mW @ 10 V
3.6 mW @ 4.5 V
ID MAX
220 A
D
G
S
N−CHANNEL MOSFET
4
4
12
3
12
3
TO−220AB
CASE 221A
STYLE 5
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
NTP
5860NLG
AYWW
1
Gate
3
Source
NTB
5860NLG
AYWW
1
Gate
2
Drain
3
Source
2
Drain
G
A
Y
WW
= Pb−Free Device
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
NTB5860NL/D
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NTB5860NL, NTP5860NL, NVB5860NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless otherwise specified)
Characteristics
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VDS = 0 V, ID = 250 mA
ID = 250 mA
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V
VDS = 60 V
TJ = 25°C
VGS = 0 V
VDS = 60 V
TJ = 125°C
Gate−Source Leakage Current
ON CHARACTERISTICS (Note 2)
IGSS
VDS = 0 V, VGS = $20 V
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On−Resistance
VGS(th)
VGS(th)/TJ
RDS(on)
Forward Transconductance
gFS
CHARGES, CAPACITANCES & GATE RESISTANCE
VGS = VDS, ID = 250 mA
VGS = 10 V, ID = 20 A
VGS = 4.5 V, ID = 20 A
VDS = 15 V, ID = 30 A
Input Capacitance
Ciss
Output Capacitance
Coss
Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)
Turn−On Delay Time
td(on)
Rise Time
tr
Turn−Off Delay Time
td(off)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VGS = 10 V, VDS = 48 V,
ID = 40 A
VGS = 10 V, VDD = 48 V,
ID = 100 A, RG = 2.5 W
Forward Diode Voltage
VSD
VGS = 0 V
TJ = 25°C
IS = 40 A
TJ = 125°C
Reverse Recovery Time
trr
Charge Time
Discharge Time
ta VGS = 0 V, IS = 100 A,
tb dIS/dt = 20 A/ms
Reverse Recovery Stored Charge
QRR
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
Min Typ Max Unit
60
6.1
V
mV/°C
1.0 mA
100
$100
nA
1.0 3.0 V
−7.7 mV/°C
2.4 3.0 mW
2.8 3.6
47 S
13216
1127
752
220
13
37
54
pF
nC
25 ns
58
98
144
0.76 1.1
0.60
50
25
25
71
Vdc
ns
nC
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NTB5860NL, NTP5860NL, NVB5860NL
TYPICAL CHARACTERISTICS
280 VGS =
240 10 V
200
160
VGS = 4 V
4.4 V
TJ = 25°C
3.8 V
3.6 V
120 3.4 V
80
3.2 V
40
0
01234
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
5
280
VDS ≥ 10 V
240
200
160
120
80 TJ = 25°C
40
TJ = 125°C
0
2
TJ = −55°C
3
4
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
5
0.008
0.006
0.004
0.002
ID = 20 A
TJ = 25°C
0.0035
TJ = 25°C
0.0030
0.0025
VGS = 4.5 V
VGS = 10 V
0.000
2
4 68
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance vs. Gate Voltage
10
0.0020
10 30 50 70 90 110
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current
130
2.0
1.8
ID = 20 A
VGS = 10 V
1.6
100000
VGS = 0 V
TJ = 150°C
1.4
10000
1.2
1.0 TJ = 125°C
0.8
0.6
−50
−25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
175
1000
10 20 30 40 50
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
60
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NTB5860N | N-Channel Power MOSFET / Transistor | ON Semiconductor |
NTB5860NL | N-Channel Power MOSFET / Transistor | ON Semiconductor |
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