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PDF NVB5860NL Data sheet ( Hoja de datos )
| Número de pieza | NVB5860NL | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NTB5860NL, NTP5860NL,
NVB5860NL
N-Channel Power MOSFET
60 V, 220 A, 3.0 mW
Features
• Low RDS(on)
• High Current Capability
• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant
• NVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
MAXIMUM RATINGS (TJ = 25°C Unless otherwise specified)
Parameter
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Continuous Drain
Current, RqJC
Steady
State
TA = 25°C
TA = 100°C
Power Dissipation,
RqJC
Steady
State
TA = 25°C
Pulsed Drain Current
tp = 10 ms
Current Limited by Package
Operating and Storage Temperature Range
VDSS
VGS
ID
PD
IDM
IDMmax
TJ, Tstg
60
$20
220
156
283
660
130
−55 to
+175
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (L = 0.3 mH)
IS 130
EAS 735
Lead Temperature for Soldering
Purposes (1/8″ from Case for 10 Seconds)
TL 260
Unit
V
V
A
W
A
A
°C
A
mJ
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Case (Drain) Steady State
RqJC
0.53 °C/W
Junction−to−Ambient − Steady State (Note 1)
RqJA
28
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
© Semiconductor Components Industries, LLC, 2012
Augsut, 2012 − Rev. 1
1
http://onsemi.com
V(BR)DSS
60 V
RDS(on) MAX
3.0 mW @ 10 V
3.6 mW @ 4.5 V
ID MAX
220 A
D
G
S
N−CHANNEL MOSFET
4
4
12
3
12
3
TO−220AB
CASE 221A
STYLE 5
D2PAK
CASE 418B
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
NTP
5860NLG
AYWW
1
Gate
3
Source
NTB
5860NLG
AYWW
1
Gate
2
Drain
3
Source
2
Drain
G
A
Y
WW
= Pb−Free Device
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
NTB5860NL/D
1 page  
NTB5860NL, NTP5860NL, NVB5860NL
TYPICAL CHARACTERISTICS
1
Duty Cycle = 0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (s)
Figure 12. Thermal Response
ORDERING INFORMATION
Device
Package
Shipping†
NTP5860NLG
TO−220AB
(Pb−Free)
50 Units / Rail
NTB5860NLT4G
D2PAK
(Pb−Free)
800 / Tape & Reel
NVB5860NLT4G*
D2PAK
(Pb−Free)
800 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
http://onsemi.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NVB5860NL.PDF ] | |
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