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PDF S9012 Data sheet ( Hoja de datos )
| Número de pieza | S9012 | |
| Descripción | PNP EPITAXIAL PLANAR TRANSISTOR | |
| Fabricantes | TGS | |
| Logotipo |  |
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1. S9012 transistor datasheet  Hay una vista previa y un enlace de descarga de S9012 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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TIGER ELECTRONIC CO.,LTD
S9012
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The S9012 is designed for use in 1W output amplifier of portable radios
in class B push-pull operation.
Features
• High total power dissipation. (PT:625mW)
• High collector current. (IC:500mA)
• Complementary to S9013
• Excellent linearity.
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ........................................................................................................... -55~+150°C
Junction Temperature ................................................................................................. +150°C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C).............................................................................................. 625mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage...................................................................................................... 40 V
VCEO Collector to Emitter Voltage................................................................................................... 20 V
VEBO Emitter to Base Voltage........................................................................................................... 5 V
IC Collector Current .................................................................................................................... 500 mA
Icp Base Current ......................................................................................................................... 100 mA
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
VBE(on)
hFE1
hFE2
Cob
fT
Min.
40
20
5.0
-
-
-
-
-
112
40
-
100
Typ.
-
-
-
-
-
-
-
-
180
-
-
-
Max.
-
-
-
100
100
0.6
1.2
0.9
300
-
8
-
Unit
V
V
V
nA
nA
V
V
V
pF
MHz
Test Conditions
IC=100uA, IE=0
IC=1mA, IB=0
IE=100uA, IC=0
VCE=25V, IE=0
VEB=3V, IC=0
IC=500mA, IB=50mA
IC=500mA, IB=50mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=500mA
VCB=10V, f=1MHz
VCE=1V, IC=10mA, f=100MHz
Classification on hFE1
Rank
Range
G
112-166
H
144-202
I1
176-246
I2
214-300
TIGER ELECTRONIC CO.,LTD
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet S9012.PDF ] | |
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