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Datasheet S-LBAT54ALT1G Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | S-LBAT54ALT1G | SCHOTTKY BARRIER DIODE LESHAN RADIO COMPANY, LTD.
SCHOTTKY BARRIER DIODE
These Schottky barrier diodes are designed for high speed sawppitlcichaintigons, circuit protection, and voltage clamping. Extremely
low forward voltage reduces conduction loss. Miniature surface mpaocuknatge is excellent for hand held and portable |  Leshan Radio Company | diode |
S-L Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | S-L1SS400CST5G | Switching diode LESHAN RADIO COMPANY, LTD.
Switching diode
• Applications High speed switching
• Features 1) Extremely small surface mounting type. 2) High Speed. 3) High reliability.
• Construction Silicon epitaxial planar
L1SS400CST5G S-L1SS400CST5G
1
2
SOD - 923
• We declare that the material of produ Leshan Radio Company diode | | |
| 2 | S-L2980 | High Ripple Rejection Low Dropout CMOS Voltage Regulator DataSheet4U.com
DataSheet 4 U .com DataSheet4U.com
High Ripple Rejection Low Dropout CMOS Voltage Regulator S-L2980 Series
DataSheet4U.com
2001 IC Marketing Group Seiko Instruments Inc.
Seiko Instruments Inc. / Components Headquarters
DataShee
et4U.com
DataSheet4U.com
Data  Seiko Instruments regulator | | |
| 3 | S-L2985 | High Ripple Rejection WLP Package Low Dropout CMOS Voltage Regulator
Rev.2.0_00
HIGH RIPPLE-REJECTION WLP PACKAGE LOW DROPOUT CMOS VOLTAGE REGULATOR
S-L2985 Series
The S-L2985 Series is a positive voltage regulator with a low dropout voltage, high output voltage accuracy, and low current consumption developed based on CMOS technology. A built- Seiko Instruments regulator | | |
| 4 | S-L2N7002LT1G | Small Signal MOSFET LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET 115 mAmps, 60 Volts
N–Channel SOT–23
• • ESD Protected:1000V • S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
MAXIMUM RATINGS
Rating Drain–Source V Leshan Radio Company mosfet | | |
| 5 | S-L2SA1365ELT1G | General Purpose Transistor LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
DESCRIPTION
L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat).
F.EATURE
●Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ
●Excellent linearity of DC forw Leshan Radio Company transistor | | |
| 6 | S-L2SA1365ELT3G | General Purpose Transistor LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
DESCRIPTION
L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat).
F.EATURE
●Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ
●Excellent linearity of DC forw Leshan Radio Company transistor | | |
| 7 | S-L2SA1365FLT1G | General Purpose Transistor LESHAN RADIO COMPANY, LTD.
General Purpose Transistor
DESCRIPTION
L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat).
F.EATURE
●Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ
●Excellent linearity of DC forw Leshan Radio Company transistor | |
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