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Número de pieza | NE85630 | |
Descripción | NPN Silicon RF Transistor | |
Fabricantes | Renesas | |
Logotipo | ||
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Preliminary
NE85630
/
2SC4226
JEITA
Part No.
Data Sheet
NPN Silicon RF Transistor
R09DS0022EJ0200
Rev.2.00
NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold Jun 29, 2011
DESCRIPTION
The NE85630 / 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.
It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin
super minimold package.
FEATURES
• Low noise : NF = 1.2 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
• High gain : ⏐S21e⏐2 = 9 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
• 3-pin super minimold package
<R> ORDERING INFORMATION
Part Number
NE85630
2SC4226
NE85630-T1
2SC4226-T1
Order Number
NE85630-A
2SC4226-A
NE85630-T1-A
2SC4226-T1-A
Package
3-pin super
Minimold
(Pb-Free)
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (Collector) face the perforation side of the tape
Remark To order evaluation samples, please contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Ptot Note
Tj
Tstg
Ratings
20
12
3
100
150
150
−65 to +150
Unit
V
V
V
mA
mW
°C
°C
Note Free air
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
R09DS0022EJ0200 Rev.2.00
Jun 29, 2011
Page 1 of 6
1 page NE85630 / 2SC4226
A Business Partner of Renesas Electronics Corporation.
S-PARAMETERS
S-parameters and noise parameters are provided on our Web site in a format (S2P) that enables the direct import of
the parameters to microwave circuit simulators without the need for keyboard inputs.
Click here to download S-parameters.
[RF and Microwave] → [Device Parameters]
URL http://www2.renesas.com/microwave/en/download.html
R09DS0022EJ0200 Rev.2.00
Jun 29, 2011
Page 5 of 6
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet NE85630.PDF ] |
Número de pieza | Descripción | Fabricantes |
NE85630 | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR | NEC |
NE85630 | NPN Silicon RF Transistor | Renesas |
NE85632 | NECs NPN SILICON HIGH FREQUENCY TRANSISTOR | NEC |
NE85633 | NPN Silicon RF Transistor | Renesas |
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