ZXMN10A08E6TA PDF даташит
Спецификация ZXMN10A08E6TA изготовлена «Diodes» и имеет функцию, называемую «100V N-CHANNEL ENHANCEMENT MODE MOSFET». |
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Детали детали
Номер произв | ZXMN10A08E6TA |
Описание | 100V N-CHANNEL ENHANCEMENT MODE MOSFET |
Производители | Diodes |
логотип |
7 Pages
No Preview Available ! |
Product Summary
V(BR)DSS
100V
Max RDS(on)
250mΩ @ VGS = 10V
300mΩ @ VGS = 6V
Max ID
TA = 25°C
(Note 5)
1.9A
1.68A
Description and Applications
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
• DC - DC converters
• Power management functions
• Disconnect switches
• Motor control
SOT26
A Product Line of
Diodes Incorporated
ZXMN10A08E6
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Low on-resistance
• Fast switching speed
• Totally Lead-Free & Fully RoHS compliant (Note 1)
• Halogen and Antimony Free. “Green” Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT26
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.015 grams (approximate)
Top View
Pinout Top-view
Device symbol
Ordering Information (Note 3)
Part Number
ZXMN10A08E6TA
ZXMN10A08E6TC
Reel Size (inch)
7
13
Tape Width (mm)
8
8
Quantity Per Reel
3000
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
10A8 = Product Type Marking Code
ZXMN10A08E6
Datasheet Number: DS31909 Rev. 8 – 2
1 of 7
www.diodes.com
March 2012
© Diodes Incorporated
No Preview Available ! |
A Product Line of
Diodes Incorporated
ZXMN10A08E6
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source voltage
Gate-Source voltage
Note 5)
Continuous Drain current
VGS = 10V
TA=70°C (Note 5)
(Note 4)
(Note 7)
Pulsed Drain current
(Note 6)
Continuous Source Current (Body Diode) (Note 5)
Pulsed Source Current (Body Diode)
(Note 6)
Symbol
VDSS
VGS
ID
IDM
IS
ISM
Value
100
±20
1.9
1.5
1.5
3.5
8.6
2.5
8.6
Unit
V
V
A
A
A
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Power Dissipation
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads
Operating and Storage Temperature Range
(Note 4)
(Note 5)
(Note 7)
(Note 4)
(Note 5)
(Note 7)
Symbol
PD
RθJA
RθJL
TJ, TSTG
Value
1.1
1.7
6.3
114
73.5
19.7
-55 to +150
Notes:
4. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
5. For a device surface mounted on FR4 PCB measured at t ≤ 5 secs.
6. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300µs - pulse width limited by maximum junction temperature.
7. Thermal resistance from junction to solder-point (at the end of the drain lead).
Unit
W
°C/W
°C/W
°C
Thermal Characteristics
10
R
DS(on)
Limited
1
DC
100m
1s
100ms
Single Pulse
10m T =25°C
amb
10ms
1ms
100µs
100m
1
10 100
V Drain-Source Voltage (V)
DS
Safe Operating Area
120
T =25°C
amb
100
80
D=0.5
60
40
D=0.2
20
Single Pulse
D=0.05
D=0.1
100µ 1m 10m 100m 1 10 100
Pulse Width (s)
Transient Thermal Impedance
1k
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 20 40 60 80 100 120 140 160
Temperature (°C)
Derating Curve
100 Single Pulse
T =25°C
amb
10
1
100µ 1m 10m 100m 1 10 100 1k
Pulse Width (s)
Pulse Power Dissipation
ZXMN10A08E6
Datasheet Number: DS31909 Rev. 8 – 2
2 of 7
www.diodes.com
March 2012
© Diodes Incorporated
No Preview Available ! |
A Product Line of
Diodes Incorporated
ZXMN10A08E6
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Min
100
⎯
⎯
2.0
Typ
⎯
⎯
⎯
⎯
Static Drain-Source On-Resistance (Note 8)
RDS (ON)
⎯
⎯
Forward Transconductance (Notes 8 & 10)
Diode Forward Voltage (Note 8)
Reverse recovery time (Note 10)
Reverse recovery charge (Note 10)
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
gfs ⎯ 5.0
VSD ⎯ 0.87
trr 27
Qrr ⎯ 32
Ciss ⎯ 405
Coss ⎯ 28.2
Crss ⎯ 14.2
Gate Charge (Note 9)
Qg ⎯ 4.2
Total Gate Charge (Note 9)
Gate-Source Charge (Note 9)
Gate-Drain Charge (Note 9)
Turn-On Delay Time (Note 9)
Turn-On Rise Time (Note 9)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Notes:
8. Measured under pulsed conditions. Width 300μs. Duty cycle 2%.
9. Switching characteristics are independent of operating junction temperature.
10. For design aid only, not subject to production testing.
7.7
1.8
2.1
3.4
2.2
8
3.2
Max
⎯
0.5
100
4.0
0.25
0.30
⎯
0.95
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit Test Condition
V ID = 250μA, VGS = 0V
μA VDS = 100V, VGS = 0V
nA VGS = ±20V, VDS = 0V
V ID = 250μA, VDS = VGS
Ω VGS = 10V, ID = 3.2A
VGS = 6V, ID = 2.6A
S VDS = 15V, ID = 3.2A
V IS = 3.2A, VGS = 0V
ns
nC IS = 1.2A, di/dt = 100A/μs
pF
pF
VDS = 50V, VGS = 0V
f = 1MHz
pF
nC VGS = 5V, VDS = 50V
ID = 1.2A
nC
nC VGS = 10V, VDS = 50V
nC ID = 1.2A
ns
ns VDD = 30V, VGS = 10V
ns ID = 1.2A, RG ≅ 6.0Ω
ns
ZXMN10A08E6
Datasheet Number: DS31909 Rev. 8 – 2
3 of 7
www.diodes.com
March 2012
© Diodes Incorporated
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ZXMN10A08E6TA | 100V N-CHANNEL ENHANCEMENT MODE MOSFET | Diodes |
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