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Datasheet J132-Z Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | J132-Z | MOS FIELD EFFECT POWER TRANSISTORS DATA SHEET
MOS FIELD EFFECT POWER TRANSISTORS
2SJ132, 2SJ132-Z
P-CHANNEL POWER MOS FET FOR SWITCHING
FEATURES • Gate drive available at logic level (VGS = −4 V) • High current control available in small
dimension due to low RDS(on) (≅ 0.25 Ω) • 2SJ132-Z is a lead process product and is |  NEC | transistor |
J13 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | J13003 | Mini Size Discrete Semiconductor Elements Mini size of Discrete semiconductor elements
Diode Rectifier
Schottky SOD-723 / SOD-523 / SOD-323 TO-252 / TO263 SOT-23-6 / TSSOP-8 / SOP-8 mini-MELF / MELF SMA / SMB / SMC Switching SOT-523 / SOT-323 / SOT-23 Bridge (Single phase / Three phase) RF ( low capacitance ) & Varactor SOT-323 SOT-23 TO-25  Sinyork data | | |
| 2 | J13009 | FJP13009
FJP13009 High Voltage Fast-Switching NPN Power Transistor
March 2007
FJP13009
High Voltage Fast-Switching NPN Power Transistor
• High Voltage Capability • High Switching Speed • Suitable for Electronic Ballast and Switching Mode Power Supply
1
TO-220 2.Collector 3.Emit  Fairchild Semiconductor data | | |
| 3 | J132 | MOS FIELD EFFECT POWER TRANSISTORS DATA SHEET
MOS FIELD EFFECT POWER TRANSISTORS
2SJ132, 2SJ132-Z
P-CHANNEL POWER MOS FET FOR SWITCHING
FEATURES • Gate drive available at logic level (VGS = −4 V) • High current control available in small
dimension due to low RDS(on) (≅ 0.25 Ω) • 2SJ132-Z is a lead process product and is NEC transistor | | |
| 4 | J132-Z | MOS FIELD EFFECT POWER TRANSISTORS DATA SHEET
MOS FIELD EFFECT POWER TRANSISTORS
2SJ132, 2SJ132-Z
P-CHANNEL POWER MOS FET FOR SWITCHING
FEATURES • Gate drive available at logic level (VGS = −4 V) • High current control available in small
dimension due to low RDS(on) (≅ 0.25 Ω) • 2SJ132-Z is a lead process product and is NEC transistor | | |
| 5 | J133 | MOS FET ETC data | | |
| 6 | J133 | P-CHANNEL POWER MOS FET DATA SHEET
MOS FIELD EFFECT POWER TRANSISTORS
2SJ133, 2SJ133-Z
P-CHANNEL POWER MOS FET FOR SWITCHING
FEATURES • Gate drive available at logic level (VGS = –4 V) • High current control available in small
dimension due to low RDS(on) (≅ 0.45 Ω) • 2SJ133-Z is a lead process product and is NEC data | | |
| 7 | J133-Z | MOS FET ETC data | |
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