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PDF NCP81145 Data sheet ( Hoja de datos )
| Número de pieza | NCP81145 | |
| Descripción | VR12.5 Compatible Synchronous Buck MOSFET Driver | |
| Fabricantes | ON Semiconductor | |
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NCP81145
VR12.5 Compatible
Synchronous Buck MOSFET
Driver
The NCP81145 is a high performance dual MOSFET gate driver
optimized to drive the gates of both high−side and low−side power
MOSFETs in a synchronous buck converter. It can drive up to 3 nF
load with a 25 ns propagation delay and 20 ns transition time.
Adaptive anti−cross−conduction and power saving operation circuit
can provide a low switching loss and high efficiency solution for
notebook systems.
The UVLO function guarantees the outputs are low when the supply
voltage is low.
Features
• Faster Rise and Fall Times
• Adaptive Anti−Cross−Conduction Circuit
• Zero Cross Detection function
• Output Disable Control Turns Off Both MOSFETs
• Undervoltage Lockout
• Power Saving Operation Under Light Load Conditions
• Direct Interface to NCP6131 and Other Compatible PWM
Controllers
• Thermally Enhanced Package
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Power Management Solutions for Notebook systems
http://onsemi.com
1
DFN8
CASE 506AA
MARKING
DIAGRAM
1
A3MG
G
A3 = Specific Device Code
M = Date Code
G = Pb−Free Package
(*Note: Microdot may be in either location)
PINOUT DIAGRAM
BST 1
PWM 2
EN 3
VCC 4
FLAG
9
8 DRVH
7 SW
6 GND
5 DRVL
ORDERING INFORMATION
Device
Package
NCP81145MNTBG DFN8
(Pb−Free)
Shipping†
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 0
1
Publication Order Number:
NCP81145/D
1 page  
NCP81145
NCP81145 ELECTRICAL CHARACTERISTICS (−40°C < TA < +125°C; 4.5 V < VCC < 5.5 V, 4.5 V < BST−SWN < 5.5 V,
4.5 V < BST < 30 V, 0 V < SWN < 21 V, unless otherwise noted)
Parameter
Test Conditions
Min Typ Max
SUPPLY VOLTAGE
VCC Operation Voltage
4.5 5.5
UNDERVOLTAGE LOCKOUT
VCC Start Threshold
3.8 4.35 4.5
VCC UVLO Hysteresis
150 200 250
SUPPLY CURRENT
Shutdown Mode
Normal Mode
Standby Current
ICC + IBST, EN = GND
ICC + IBST, EN = 5 V, PWM = OSC
ICC + IBST, EN = HIGH, PWM = LOW,
No loading on DRVH & DRVL
11 20
4.7
0.9
Standby Current
INCoC
l+oaIBdSinTg,
EN
on
= HIGH,
DRVH &
PWM =
DRVL
HIGH,
1.1
BOOTSTRAP DIODE
Forward Voltage
PWM INPUT
VCC = 5 V, forward bias current = 2 mA
0.1 0.4 0.6
PWM Input High
3.4
PWM Mid−State
1.3 2.7
PWM Input Low
0.7
ZCD Blanking Timer
350
HIGH SIDE DRIVER
Output Impedance, Sourcing Current
Output Impedance, Sinking Current
DRVH Rise Time trDRVH
DRVH Fall Time tfDRVH
DRVH Turn−Off Propagation Delay tpdlDRVH
DRVH Turn−On Propagation Delay tpdhDRVH
SW Pulldown Resistance
VBST−VSW = 5 V
VBST−VSW = 5 V
VCC = 5 V, 3 nF load, VBST−VSW = 5 V
VCC = 5 V, 3 nF load, VBST−VSW =5 V
CLOAD = 3 nF
CLOAD = 3 nF
SW to PGND
0.9 1.7
0.7 1.7
16 25
11 18
10 30
10 40
45
DRVH Pulldown Resistance
DRVH to SW, BST−SW = 0 V
45
LOW SIDE DRIVER
Output Impedance, Sourcing Current
0.9 1.7
Output Impedance, Sinking Current
0.4 0.8
DRVL Rise Time trDRVL
DRVL Fall Time tfDRVL
DRVL Turn−Off Propagation Delay tpdlDRVL
DRVL Turn−On Propagation Delay tpdhDRVL
DRVL Pulldown Resistance
CLOAD = 3 nF
CLOAD = 3 nF
CLOAD = 3 nF
CLOAD = 3 nF
DRVL to PGND, VCC = PGND
16 25
11 15
10 30
5.0 25
45
Unit
V
V
mV
mA
mA
mA
mA
V
V
V
V
ns
W
W
ns
ns
ns
ns
kW
kW
W
W
ns
ns
ns
ns
kW
http://onsemi.com
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet NCP81145.PDF ] | |
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