PDF NCP5369 Data sheet ( Hoja de datos )

Número de pieza	NCP5369
Descripción	Integrated Driver and MOSFET
Fabricantes	ON Semiconductor
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No Preview Available ! NCP5369 Integrated Driver and MOSFET The NCP5369 integrates a MOSFET driver, high−side MOSFET and low−side MOSFET into a 6 mm x 6 mm 40−pin QFN package. The driver and MOSFETs have been optimized for high−current DC−DC buck power conversion applications. The NCP5369 integrated solution greatly reduces package parasitics and board space compared to a discrete component solution. Features • Capable of Switching Frequencies Up to 1 MHz • Capable of Output Currents Up to 35 A • Internal Bootstrap Diode • Zero Current Detection • Undervoltage Lockout • Internal Thermal Warning / Thermal Shutdown • These are Pb−Free Devices 5 V 12−20 V 5V ZCD Enable Output Disable PWM Thermal Warning THWN VIN VCIN BOOT ZCD_EN# DISB# PWM CGND PHASE VSWH PGND Vout Figure 1. Application Schematic www.onsemi.com 1 40 QFN40 MN SUFFIX CASE 485AZ MARKING DIAGRAM 1 NCP5369 AWLYYWWG A = Assembly Location WL = Wafer Lot YY = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Device Package Shipping† NCP5369MNR2G QFN40 2500/Tape & Reel (Pb−Free) NCP5369MNTWG QFN40 2500/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2015 April, 2015 − Rev. 5 1 Publication Order Number: NCP5369/D 1 page NCP5369 ELECTRICAL CHARACTERISTICS (Note 2) (VCIN = 5 V, VIN = 12 V, TA = −10°C to +100°C, unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit SUPPLY CURRENT VCIN Current (normal mode) − DISB# = 5 V, PWM = OSC, FSW = 400 kHz 14 20 mA VCIN Current (shutdown mode) UNDERVOLTAGE LOCKOUT − DISB# = GND 15 30 mA UVLO Startup − 3.8 4.35 4.5 V UVLO Hysteresis − 150 200 250 mV BOOTSTRAP DIODE Forward Voltage − VCIN = 5 V, forward bias current = 2 mA 0.1 0.4 0.6 V PWM INPUT PWM Input Voltage High PWM Input Voltage Mid−State PWM Input Voltage Low Tri−State Shutdown Holdoff Time PWM Input Resistance VPWM_HI VPWM_MID VPWM_LO tholdoff 3.6 − − 1.3 − 3.0 − − 0.7 250 63 V V V ns kW PWM Input Bias Voltage 2.2 V OUTPUT DISABLE Output Disable Input Voltage High Output Disable Input Voltage Low Output Disable Hysteresis VDISB#_HI VDISB#_LO − 2.0 − − V − − 0.8 V − 500 − mV Output Disable Propagation Delay − 20 40 ns ZERO CROSS DETECT Zero Cross Detect High Zero Cross Detect Low Zero Cross Detect Threshold VZCD_EN#_HI VZCD_EN#_LO 2.0 − − V − − 0.8 V −6 mV ZCD Blanking Timer 250 ns THERMAL WARNING/SHUTDOWN Thermal Warning Temperature 150 °C Thermal Warning Hysteresis 15 °C Thermal Shutdown Temperature 180 °C Thermal Shutdown Hysteresis 25 °C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. www.onsemi.com 5 5 Page

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