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Número de pieza | NCP81152 | |
Descripción | Synchronous Buck Dual MOSFET Driver | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de NCP81152 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
No Preview Available ! NCP81152
Synchronous Buck Dual
MOSFET Driver
The NCP81152 is a high−performance dual MOSFET gate driver
optimized to drive the gates of both high−side and low−side power
MOSFETs in a synchronous buck converter. Two drivers are
co−packaged into a 2.5 mm x 3.5 mm QFN16 package that greatly
reduces the footprint compared to two discrete drivers. Adaptive
anti−cross−conduction circuitry and power saving operation provides
a low−switching−loss and high−efficiency solution for notebook
systems. The under−voltage lockout function guarantees the outputs
are low when the supply voltage is low.
Features
• Adaptive Anti−Cross−Conduction Circuit
• Integrated Bootstrap Diode
• Zero Cross Detection
• Floating Top Driver Accommodates Boost Voltages up to 35 V
• Output Disable Control Turns Off Both MOSFETs
• Under−voltage Lockout
• Power Saving Operation Under Light Load Conditions
• Thermally Enhanced Package
• These are Pb−Free Devices
Typical Applications
• Vcore Power for Notebook Systems
• Power Systems for DDR and Graphics
www.onsemi.com
1
QFN16
MN SUFFIX
CASE 485AW
MARKING DIAGRAM
81152
ALYWG
G
81152
A
L
Y
W
G
= Specific Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
PWM1
EN1
VCC1
BST2
PWM2
EN2
1
16
SW1
GND1
DRVL1
DRVH2
SW2
GND2
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 2
(Top View)
ORDERING INFORMATION
Device
NCP81152MNTWG
Package
QFN16
(Pb−Free)
Shipping†
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1 Publication Order Number:
NCP81152/D
1 page NCP81152
Table 4. NCP81152 DRIVER ELECTRICAL CHARACTERISTICS
Unless otherwise stated: −40°C < TA < +100°C; VCC = 4.5 V ~ 5.5 V; BST−SW = 4.5 V ~ 5.5 V; BST = 4.5 V ~ 30 V; SWN = 0 V ~ 21 V.
Parameter
Test Conditions
Min Typ Max Units
ENABLE INPUT (EN1, EN2)
Input High
3.3 V
Mid−State
1.35 1.8 V
Input Low
0.6 V
Normal Mode Bias Current
−1 1 mA
Propagation Delay Time
20 40
ns
SWITCH NODE (SW1, SW2)
SW Leakage Current
20 mA
Zero Cross Detection Threshold Voltage SW to −20 mV, ramp slowly until BG goes off
−6
mV
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Table 5. PWM/EN TRUTH TABLE
PWM INPUT
PWM High
PWM Mid
PWM Mid
PWM Low
Enable at Mid
ZCD
ZCD Reset
Positive current through the inductor
Zero or negative current through the inductor
ZCD Reset
X
DRVL
Low
High
Low
High
Low
DRVH
High
Low
Low
Low
Low
PWM
DRVL
DRVH−
SW
tpdlDRVL tfDRVL
90%
90%
1 V 10%
tpdhDRVH trDRVH
90%
tpdlDRVH tfDRVH
90%
10%
trDRVL
10%
Figure 2. Timing Diagram
1 V 10%
tpdhDRVL
www.onsemi.com
5
5 Page |
Páginas | Total 8 Páginas | |
PDF Descargar | [ Datasheet NCP81152.PDF ] |
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