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NTMFD4C85N PDF даташит

Спецификация NTMFD4C85N изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Dual N-Channel SO8FL».

Детали детали

Номер произв NTMFD4C85N
Описание Dual N-Channel SO8FL
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTMFD4C85N Даташит, Описание, Даташиты
NTMFD4C85N
PowerPhase, Dual
N-Channel SO8FL
30 V, High Side 25 A / Low Side 49 A
Features
Co−Packaged Power Stage Solution to Minimize Board Space
Minimized Parasitic Inductances
Optimized Devices to Reduce Power Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
DC−DC Converters
System Voltage Rails
Point of Load
www.onsemi.com
V(BR)DSS
Q1 Top FET
30 V
Q2 Bottom FET
30 V
RDS(ON) MAX
3.0 mW @ 10 V
4.3 mW @ 4.5 V
0.8 mW @ 10 V
1.2 mW @ 4.5 V
ID MAX
25 A
49 A
D1 (3, 4, 9)
Figure 1. Typical Application Circuit
100
95
90
85
80 VIN = 12 V
VOUT = 1.2 V
75 VGS = 5 V
FSW = 300 kHz
70 TA = 25°C
0 5 10 15 20 25 30
LOAD CURRENT (A)
Figure 2. Typical Efficiency Performance
POWERPHASEGEVB Evaluation Board
© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 0
1
(1) G1
(2) S1
SW (5, 6, 7)
(8) G2
S2 (10)
PIN CONNECTIONS
D1 4
D1 3 9 10
D1 S2
S1 2
5 SW
6 SW
7 SW
G1 1
8 G2
(Bottom View)
MARKING
DIAGRAM
1
DFN8
CASE 506CR
4C85N
AYWZZ
1
4C85N = Specific Device Code
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
Publication Order Number:
NTMFD4C85N/D









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NTMFD4C85N Даташит, Описание, Даташиты
NTMFD4C85N
Table 1. MAXIMUM RATINGS (TJ=25°C unless otherwise stated)
Parameter
Symbol
Value
Units
Drain−to−Source Voltage
Q1 VDSS
Q2
30
V
Gate−to−Source Voltage
Q1 VGS
Q2
±20
V
Continuous Drain Current RθJA (Note 1)
Power Dissipation
RθJA (Note 1)
TA = 25°C
TA = 85°C
TA = 25°C
TA = 85°C
TA = 25°C
Q1
Q2
Q1
Q2
ID
PD
20.1
14.5
39
28.1
1.95
A
W
Continuous Drain Current RθJA 10 s (Note 1)
Power Dissipation
RθJA ≤ 10 s (Note 1)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 85°C
TA = 25°C
Q1
Q2
Q1
Q2
ID
PD
25.4
18.3
49.2
35.5
3.10
A
W
Continuous Drain Current
RθJA (Note 2)
Power Dissipation
RθJA (Note 2)
TA = 25°C
TA = 85°C
TA = 25°C
TA = 85°C
TA = 25°C
Q1
Q2
Q1
Q2
ID
PD
15.4
11.1
29.7
21.4
1.13
A
W
Pulsed Drain Current
TA = 25°C
Q1
IDM
300
A
tp = 10 ms
Q2
525
Operating Junction and Storage Temperature
Q1 TJ, TSTG −55 to +150 °C
Q2
Source Current (Body Diode)
Q1 IS 10 A
Q2 10
Drain to Source DV/DT
dV/dt 6 V/ns
Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C,
VDD = 50 V, VGS = 10 V, L = 0.1 mH, RG = 25 W)
IL = 19 Apk
IL = 26 Apk
Q1
Q2
EAS
EAS
34.5
222
mJ
Lead Temperature for Soldering Purposes (1/8from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm2.
Table 2. THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – (t 10 s) (Note 3)
3. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu
4. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm2
Symbol
RθJA
Value
64.2
110.5
40.3
Units
°C/W
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NTMFD4C85N Даташит, Описание, Даташиты
NTMFD4C85N
Table 3. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol FET
Test Condition
Min Typ Max Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown
Voltage
Drain−to−Source Breakdown
Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
V(BR)DSS
V(BR)DSS / TJ
IDSS
Q1
Q2
Q1
Q2
Q1
Gate−to−Source Leakage Current
IGSS
Q2
Q1
Q2
VGS = 0 V, ID = 250 mA
VGS = 0 V,
VDS = 24 V
TJ = 25°C
TJ = 125°C
TJ = 25°C
VDS = 0 V,
VGS = 20 V
30 V
30
19 mV/°C
17
1 mA
10
1
100 nA
100
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
VGS(TH)
Q1
Q2
VGS = VDS, ID = 250 mA
1.3
1.3
2.1 V
2.1
Negative Threshold Temperature VGS(TH) / TJ
Coefficient
Q1
Q2
4.3 mV/°C
4.6
Drain−to−Source On Resistance
RDS(on)
Q1
Q2
CAPACITANCES
VGS = 10 V
VGS = 4.5 V
VGS = 10 V
VGS = 4.5 V
ID = 20 A
ID = 20 A
ID = 30 A
ID = 30 A
2.2 3.0
3.3 4.3
0.6 0.8
0.95 1.2
mW
Input Capacitance
CISS
Q1
Q2
1960
6660
pF
Output Capacitance
COSS
Q1
Q2 VGS = 0 V, f = 1 MHz, VDS = 15 V
1230
3660
Reverse Capacitance
CRSS
Q1
Q2
102
126
CHARGES & GATE RESISTANCE
Total Gate Charge
QG(TOT)
Q1
Q2
15 nC
45.2
Threshold Gate Charge
Gate−to−Source Charge
QG(TH)
QGS
Q1
Q2
Q1 VGS = 4.5 V, VDS = 15 V; ID = 20 A
Q2
1.5
4.5
5.0
15
Gate−to−Drain Charge
QGD
Q1
Q2
5.2
11.8
Total Gate Charge
Gate Resistance
QG(TOT)
RG
Q1
Q2
Q1
Q2
VGS = 10 V, VDS = 15 V; ID = 20 A
TA = 25°C
32
99.3
1.0
1.0
nC
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width 300 ms, duty cycle 2%
6. Switching characteristics are independent of operating junction temperatures
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