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PDF NTMFS4C05N Data sheet ( Hoja de datos )
| Número de pieza | NTMFS4C05N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTMFS4C05N
Power MOSFET
30 V, 78 A, Single N−Channel, SO−8 FL
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery
• DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA
(Note 1)
TA = 25°C
TA = 80°C
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°C
TA = 25°C
TA = 80°C
Power Dissipation
RqJA ≤ 10 s (Note 1)
Continuous Drain
Current RqJA
(Note 2)
Steady
State
TA = 25°C
TA = 25°C
TA = 80°C
Power Dissipation
RqJA (Note 2)
Continuous Drain
Current RqJC
(Note 1)
TA = 25°C
TC = 25°C
TC =80°C
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
TC = 25°C
TA = 25°C, tp = 10 ms
Current Limited by Package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VGS = 20 V, IL = 41 Apk,
L = 0.1 mH, RGS = 25 W) (Note 3)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
VDSS
VGS
ID
PD
ID
PD
ID
PD
ID
PD
IDM
IDmax
TJ,
TSTG
IS
dV/dt
EAS
TL
30 V
±20 V
21.7 A
16.3
2.57 W
34.8 A
26.0
6.6 W
11.9 A
8.9
0.77 W
78 A
58
33 W
174 A
80
−55 to
+150
30
7.0
84
A
°C
A
V/ns
mJ
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum ratings. Parts are 100% tested at TJ = 25°C,
VGS = 20 V, IL = 29 A, EAS = 42 mJ.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
3.4 mW @ 10 V
5.0 mW @ 4.5 V
D (5−8)
ID MAX
78 A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAMS
D
SO−8 FLAT LEAD
CASE 488AA
S
S
STYLE 1
S
4C05N
AYWZZ
D
GD
1D
DFN5 5x6
1
(SO−8 FLAT LEAD)
CASE 506CX
4C05N
AAYWZZ
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceabililty
ORDERING INFORMATION
Device
NTMFS4C05NT1G
Package Shipping†
SO−8 FL 1500 /
(Pb−Free) Tape & Reel
NTMFS4C05NT3G
SO−8 FL
5000 /
(Pb−Free) Tape & Reel
NTMFS4C05NT1G−001 SO−8 FL 1500 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 5
1
Publication Order Number:
NTMFS4C05N/D
1 page  
NTMFS4C05N
TYPICAL CHARACTERISTICS
3000
2750
2500
2250
2000
1750
1500
1250
1000
750
500
250
0
0
Ciss
Coss
VGS = 0 V
TJ = 25°C
Crss
5 10 15 20 25
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
30
1000
100
VDD = 15 V
ID = 15 A
VGS = 10 V
10
td(off)
td(on)
tr
tf
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
100 10 ms
100 ms
10 1 ms
1 0 V < VGS < 10 V
Single Pulse
TC = 25°C
0.1 RDS(on) Limit
Thermal Limit
Package Limit
0.01
0.01 0.1
1
10 ms
dc
10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
10
QT
8
6
4 Qgs
Qgd
TJ = 25°C
2 VDD = 15 V
VGS = 10 V
0 ID = 30 A
0 4 8 12 16 20 24 28 32
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
20
18 VGS = 0 V
16
14
12
10
8
6
4 TJ = 125°C
2
TJ = 25°C
0
0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
45
40 ID = 29 A
35
30
25
20
15
10
5
0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
5
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