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PDF NTTFS4C06N Data sheet ( Hoja de datos )
| Número de pieza | NTTFS4C06N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NTTFS4C06N
Power MOSFET
30 V, 67 A, Single N−Channel, m8FL
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• DC−DC Converters
• Power Load Switch
• Notebook Battery Management
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Drain−to−Source Voltage
VDSS
Gate−to−Source Voltage
Continuous Drain
Current RqJA (Note 1)
TA = 25°C
TA = 85°C
VGS
ID
Power Dissipation
(Note 1)
RqJA
TA = 25°C
PD
Value
30
±20
18
13
2.16
Unit
V
V
A
W
Continuous Drain
C(Nuortreen1t)RqJA ≤ 10 s
TA = 25°C ID 25.6 A
TA = 85°C
18.5
Power Dissipation
RqJA ≤ 10 s (Note 1)
Continuous Drain
Current RqJA (Note 2)
Steady
State
TA = 25°C
TA = 25°C
TA = 85°C
Power Dissipation
RqJA (Note 2)
TA = 25°C
Continuous Drain
Current RqJC (Note 1)
TC = 25°C
TC = 85°C
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
PD
ID
PD
ID
PD
IDM
TJ,
Tstg
IS
dV/dt
4.4 W
11 A
8
0.81 W
67 A
49
31 W
166
−55 to
+150
28
7
A
°C
A
V/ns
Single Pulse Drain−to−Source Avalanche Energy
(TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 37 Apk,
L = 0.1 mH, RG = 25 W) (Note 3)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
EAS
TL
68 mJ
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum ratings. Parts are 100% tested at TJ = 25°C,
VGS = 10 V, IL = 20 A, EAS = 20 mJ.
© Semiconductor Components Industries, LLC, 2014
February, 2014 − Rev. 1
1
http://onsemi.com
V(BR)DSS
30 V
RDS(on) MAX
4.2 mW @ 10 V
6.1 mW @ 4.5 V
ID MAX
67 A
N−Channel MOSFET
D (5−8)
G (4)
S (1,2,3)
1
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
1
SD
S 4C06 D
S AYWWG D
GGD
4C06
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTTFS4C06NTAG WDFN8 1500 / Tape &
(Pb−Free)
Reel
NTTFS4C06NTWG WDFN8 5000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTTFS4C06N/D
1 page  
NTTFS4C06N
TYPICAL CHARACTERISTICS
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
Ciss
Coss
VGS = 0 V
TJ = 25°C
Crss
5 10 15 20 25
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
30
1000
100
VDD = 15 V
ID = 15 A
VGS = 10 V
td(off)
tr
10 td(on)
tf
1.0
1
10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
100
10 ms
10
1 0 V < VGS < 10 V
Single Pulse
TC = 25°C
0.1 RDS(on) Limit
Thermal Limit
Package Limit
0.01
0.01 0.1
1
10 ms
100 ms
1 ms
dc
10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
10
QT
8
6
4 Qgd
2 Qgs
TJ = 25°C
VDD = 15 V
VGS = 10 V
0 ID = 30 A
0 2 4 6 8 10 12 14 16 18 20 22 24 26
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
20
18 VGS = 0 V
16
14
12
10
8
6
4 TJ = 125°C
2
0
0.4 0.5 0.6
TJ = 25°C
0.7 0.8 0.9 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
20
ID = 20 A
16
12
8
4
0
25 50 75 100 125
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
15
http://onsemi.com
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| PDF Descargar | [ Datasheet NTTFS4C06N.PDF ] | |
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