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PDF NTTFS4C08N Data sheet ( Hoja de datos )
| Número de pieza | NTTFS4C08N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTTFS4C08N
Power MOSFET
30 V, 52 A, Single N−Channel, m8FL
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• DC−DC Converters
• Power Load Switch
• Notebook Battery Management
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain−to−Source Voltage
VDSS
30
Gate−to−Source Voltage
Continuous Drain
Current RqJA (Note 1)
Power Dissipation RqJA
(Note 1)
VGS ±20
TA = 25°C
ID
15
TA = 85°C
10.8
TA = 25°C PD 2.13
Unit
V
V
A
W
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°C
TA = 85°C
ID
21 A
15
Power Dissipation
RqJA ≤ 10 s (Note 1)
Continuous Drain
Current RqJA (Note 2)
Steady
State
TA = 25°C
TA = 25°C
TA = 85°C
Power Dissipation
RqJA (Note 2)
TA = 25°C
Continuous Drain
Current RqJC (Note 1)
TC = 25°C
TC = 85°C
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
PD
ID
PD
ID
PD
IDM
TJ,
Tstg
IS
dV/dt
4.2 W
9.3 A
6.7
0.82 W
52 A
37.5
25.5 W
144 A
−55 to °C
+150
23 A
6.0 V/ns
Single Pulse Drain−to−Source Avalanche Energy
(TJ = 25°C, VGS = 10 V, IL = 29 Apk, L = 0.1 mH,
RG = 25 W) (Note 3)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
EAS
TL
42 mJ
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum ratings. Parts are 100% tested at TJ = 25°C,
VGS = 10 V, IL = 21 A, EAS = 22 mJ.
www.onsemi.com
V(BR)DSS
30 V
RDS(on) MAX
5.9 mW @ 10 V
9.0 mW @ 4.5 V
ID MAX
52 A
N−Channel MOSFET
D (5−8)
G (4)
S (1,2,3)
1
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
1
SD
S 4C08 D
S AYWWG D
GGD
4C08
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTTFS4C08NTAG WDFN8 1500 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
April, 2015 − Rev. 2
1
Publication Order Number:
NTTFS4C08N/D
1 page  
NTTFS4C08N
TYPICAL CHARACTERISTICS
1800
1600
1400
1200
1000
800
600
400
200
0
0
Ciss
Coss
VGS = 0 V
TJ = 25°C
Crss
5 10 15 20 25
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
30
1000
VDD = 15 V
ID = 15 A
VGS = 10 V
100
tr
td(off)
10 td(on)
tf
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
100 10 ms
10 100 ms
1 0 V < VGS < 10 V
Single Pulse
TC = 25°C
0.1 RDS(on) Limit
Thermal Limit
Package Limit
0.01
0.01 0.1
1
1 ms
10 ms
dc
10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
10
QT
8
6
4 Qgd
Qgs
2
TJ = 25°C
VDD = 15 V
VGS = 10 V
ID = 30 A
0
0 2 4 6 8 10 12 14 16 18 20
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
20
18 VGS = 0 V
16
14
12
10
8
6
4 TJ = 125°C
2
TJ = 25°C
0
0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
22
20 ID = 20 A
18
16
14
12
10
8
6
4
2
0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
www.onsemi.com
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