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NTTFS4C10N PDF даташит

Спецификация NTTFS4C10N изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTTFS4C10N
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTTFS4C10N Даташит, Описание, Даташиты
NTTFS4C10N
Power MOSFET
30 V, 44 A, Single NChannel, m8FL
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
DCDC Converters
Power Load Switch
Notebook Battery Management
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
Current RqJA (Note 1)
Power Dissipation RqJA
(Note 1)
TA = 25°C
TA = 80°C
TA = 25°C
VDSS
VGS
ID
PD
30
±20
13.3
9.9
2.09
V
V
A
W
Continuous Drain
C(Nuortreen1t)RqJA 10 s
TA = 25°C
TA = 80°C
ID
18.2 A
13.6
Power Dissipation
RqJA 10 s (Note 1)
Continuous Drain
Current RqJA (Note 2)
Steady
State
TA = 25°C
TA = 25°C
TA = 80°C
Power Dissipation
RqJA (Note 2)
TA = 25°C
Continuous Drain
Current RqJC (Note 1)
TC = 25°C
TC = 80°C
Power Dissipation
RqJC (Note 1)
TC = 25°C
Pulsed Drain Current
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
PD
ID
PD
ID
PD
IDM
TJ,
Tstg
IS
dV/dt
3.9 W
8.2 A
6.1
0.79 W
44 A
33
23.6 W
128
55 to
+150
20
6.0
A
°C
A
V/ns
Single Pulse DraintoSource Avalanche Energy
(TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 25 Apk,
L = 0.1 mH, RG = 25 W) (Note 3)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
EAS
TL
31 mJ
260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
3. This is the absolute maximum ratings. Parts are 100% tested at TJ = 25°C,
VGS = 10 V, IL = 17 A, EAS = 14 mJ.
http://onsemi.com
V(BR)DSS
30 V
RDS(on) MAX
7.4 mW @ 10 V
11 mW @ 4.5 V
ID MAX
44 A
NChannel MOSFET
D (58)
G (4)
S (1,2,3)
1
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
1
SD
S 4C10 D
S AYWWG D
GGD
4C10
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NTTFS4C10NTAG WDFN8 1500 / Tape &
(PbFree)
Reel
NTTFS4C10NTWG WDFN8 5000 / Tape &
(PbFree)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
May, 2013 Rev. 2
1
Publication Order Number:
NTTFS4C10N/D









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NTTFS4C10N Даташит, Описание, Даташиты
NTTFS4C10N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
JunctiontoCase (Drain)
JunctiontoAmbient – Steady State (Note 4)
JunctiontoAmbient – Steady State (Note 5)
JunctiontoAmbient – (t 10 s) (Note 4)
4. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu.
5. Surfacemounted on FR4 board using the minimum recommended pad size.
Symbol
RqJC
RqJA
RqJA
RqJA
Value
5.3
59.9
157.8
31.8
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage
DraintoSource Breakdown Voltage
(transient)
V(BR)DSS
V(BR)DSSt
VGS = 0 V, ID = 250 mA
VGS = 0 V, ID(aval) = 7.1 A,
Tcase = 25°C, ttransient = 100 ns
30
34
V
V
DraintoSource Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
14.5 mV/°C
Zero Gate Voltage Drain Current
GatetoSource Leakage Current
ON CHARACTERISTICS (Note 6)
IDSS
IGSS
VGS = 0 V,
VDS = 24 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±20 V
1.0
10
±100
mA
nA
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
DraintoSource On Resistance
VGS(TH)
VGS(TH)/TJ
RDS(on)
Forward Transconductance
Gate Resistance
CHARGES AND CAPACITANCES
gFS
RG
VGS = VDS, ID = 250 mA
1.3
4.5
VGS = 10 V
ID = 30 A
VGS = 4.5 V
ID = 15 A
VDS = 1.5 V, ID = 15 A
TA = 25°C
5.9
8.8
43
1.0
2.2 V
mV/°C
7.4
11 mW
S
W
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Capacitance Ratio
Total Gate Charge
Threshold Gate Charge
GatetoSource Charge
GatetoDrain Charge
Gate Plateau Voltage
Total Gate Charge
SWITCHING CHARACTERISTICS (Note 7)
CISS
COSS
CRSS
CRSS/CISS
QG(TOT)
QG(TH)
QGS
QGD
VGP
QG(TOT)
VGS = 0 V, f = 1 MHz, VDS = 15 V
VGS = 0 V, VDS = 15 V, f = 1 MHz
VGS = 4.5 V, VDS = 15 V; ID = 30 A
VGS = 10 V, VDS = 15 V; ID = 30 A
993
574
163
0.164
9.7
1.5
2.8
4.8
3.2
18.6
pF
nC
V
nC
TurnOn Delay Time
td(ON)
Rise Time
TurnOff Delay Time
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
Fall Time
tf
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
9.0
30
ns
14
7.0
http://onsemi.com
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NTTFS4C10N Даташит, Описание, Даташиты
NTTFS4C10N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
SWITCHING CHARACTERISTICS (Note 7)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
DRAINSOURCE DIODE CHARACTERISTICS
td(ON)
tr
td(OFF)
tf
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 10 A
TJ = 125°C
Reverse Recovery Time
tRR
Charge Time
Discharge Time
ta VGS = 0 V, dIS/dt = 100 A/ms,
tb IS = 30 A
Reverse Recovery Charge
QRR
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
Min
Typ
6.0
25
18
4.0
0.80
0.67
23.3
12.7
10.6
8.3
Max
1.1
Unit
ns
V
ns
nC
http://onsemi.com
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ON Semiconductor

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