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PDF NTTFS4C13N Data sheet ( Hoja de datos )
| Número de pieza | NTTFS4C13N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTTFS4C13N
Power MOSFET
30 V, 38 A, Single N−Channel, m8FL
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery
• DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA
(Note 1)
TA = 25°C
TA = 80°C
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°C
TA = 25°C
TA = 80°C
Power Dissipation
RqJA ≤ 10 s (Note 1)
Continuous Drain
Current RqJA
(Note 2)
Steady
State
TA = 25°C
TA = 25°C
TA = 80°C
Power Dissipation
RqJA (Note 2)
Continuous Drain
Current RqJC
(Note 1)
TA = 25°C
TC = 25°C
TC =80°C
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
TC = 25°C
TA = 25°C, tp = 10 ms
VDSS
VGS
ID
PD
ID
PD
ID
PD
ID
PD
IDM
30
±20
11.7
8.5
2.06
15.8
11.4
3.73
7.2
5.2
0.78
38
27
21.5
68
V
V
A
W
A
W
A
W
A
W
A
Current Limited by Package
TA = 25°C
IDmax
70
A
Operating Junction and Storage
Temperature
TJ,
TSTG
−55 to
+150
°C
Source Current (Body Diode)
IS 19 A
Drain to Source DV/DT
dV/dt
7.0 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VGS = 10 V, IL = 4 Apk,
L = 0.1 mH, RGS = 25 W) (Note 3)
EAS 22 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. This is absolute maximum rating. Parts are tested at TJ = 25°C Vqs = 10 V,
IL = 15 Apk, EAS = 11 mJ.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
9.4 mW @ 10 V
14 mW @ 4.5 V
D (5−8)
ID MAX
38 A
G (4)
S (1,2,3)
N−CHANNEL MOSFET
1
WDFN8
(m8FL)
CASE 511AB
MARKING DIAGRAM
1
SD
S 4C13 D
S AYWWG D
GGD
4C13
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTTFS4C13NTAG
Package
WDFN8
(Pb−Free)
Shipping†
1500 /
Tape & Reel
NTTFS4C13NTWG WDFN8
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
June, 2014 − Rev. 1
1
Publication Order Number:
NTTFS4C13N/D
1 page  
NTTFS4C13N
TYPICAL CHARACTERISTICS
1000
900
800
700
600
500
400
300
200
100
0
0
Ciss
Coss
VGS = 0 V
TJ = 25°C
Crss
5 10 15 20 25
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
30
1000
VDD = 15 V
ID = 15 A
VGS = 10 V
100
td(off)
10
tr
td(on)
tf
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
100
10 10 ms
100 ms
1
10 ms
1 ms
0 V < VGS < 10 V
Single Pulse
0.1 TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
0.01
0.01 0.1
1
dc
10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
11
10
9
8
7
6
5
4
3 Qgs
2
1
0
02
QT
Qgd
468
TJ = 25°C
VDD = 15 V
VGS = 10 V
ID = 30 A
10 12 14 16
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
30
VGS = 0 V
25
20 TJ = 25°C
15
10 TJ = 125°C
5
0
0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
12
ID = 15 A
10
8
6
4
2
0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
5
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| PDF Descargar | [ Datasheet NTTFS4C13N.PDF ] | |
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