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PDF NTMFS4H02N Data sheet ( Hoja de datos )
| Número de pieza | NTMFS4H02N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTMFS4H02N
Power MOSFET
25 V, 193 A, Single N−Channel, SO−8FL
Features
• Optimized Design to Minimize Conduction and Switching Losses
• Optimized Package to Minimize Parasitic Inductances
• Optimized material for improved thermal performance
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• High Performance DC-DC Converters
• System Voltage Rails
• Netcom, Telecom
• Servers & Point of Load
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Units
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current RqJA
(TA = 25°C, Note 1)
Power Dissipation RqJA
(TA = 25°C, Note 1)
Continuous Drain Current RqJC
(TC = 25°C, Note 1)
Power Dissipation RqJC
(TC = 25°C, Note 1)
Pulsed Drain Current (tp = 10 ms)
Single Pulse Drain-to-Source Avalanche
Energy (Note 1) (IL = 47 Apk, L = 0.3 mH)
Drain to Source dV/dt
VDSS
VGS
ID
PD
ID
PD
IDM
EAS
dV/dt
25 V
±20 V
37 A
3.13 W
193 A
83 W
412 A
331 mJ
7 V/ns
Maximum Junction Temperature
Storage Temperature Range
TJ(max)
TSTG
150
−55 to
150
°C
°C
Lead Temperature Soldering Reflow (SMD
TSLD
260
°C
Styles Only), Pb-Free Versions (Note 2)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Values based on copper area of 645 mm2 (or 1 in2) of 2 oz copper thickness
and FR4 PCB substrate.
2. For more information, please refer to our Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
3. This is the absolute maximum rating. Parts are 100% UIS tested at TJ = 25°C,
VGS = 10 V, IL = 31 A, EAS = 144 mJ.
THERMALCHARACTERISTICS
Parameter
Symbol Max Units
Thermal Resistance,
Junction-to-Ambient (Note 1 and 4)
Junction-to-Case (Note 1 and 4)
RqJA
RqJC
40.0
1.5
4. Thermal Resistance RqJA and RqJC as defined in JESD51−3.
°C/W
http://onsemi.com
VGS
4.5 V
10 V
MAX RDS(on)
2.2 mW
1.4 mW
TYP QGTOT
18 nC
38.5 nC
PIN CONNECTIONS
SO8−FL (5 x 6 mm)
(Top View)
(Bottom View)
N−CHANNEL MOSFET
D (5−8)
G (4)
S (1,2,3)
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of
this data sheet.
© Semiconductor Components Industries, LLC, 2014
May, 2014 − Rev. 3
1
Publication Order Number:
NTMFS4H02N/D
1 page  
NTMFS4H02N
TYPICAL CHARACTERISTICS
4800
4400
4000
3600
3200
2800
2400
2000
1600
1200
800
400
0
0
Ciss
Coss
TJ = 25°C
VGS = 0 V
Crss
5 10 15 20
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
25
1000
100
VDD = 12 V
ID = 15 A
VGS = 10 V
10
td(off)
tf
tr
td(on)
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
100
10
0 V < VGS < 10 V
1
100 ms
1 ms
10 ms
0.1
0.01
0.01
RDS(on) Limit
Thermal Limit
Package Limit
0.1 1
dc
10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
10
QT
8
6
4 Qgs
Qgd
TJ = 25°C
2
VGS = 10 V
VDD = 12.0 V
ID = 30 A
0
0 4 8 12 16 20 24 28 32 36 40
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
30
VGS = 0 V
25
20
TJ = 125°C
15
TJ = 25°C
10
5
0
0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
25
50
ID = 31 A
75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
5
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| PDF Descargar | [ Datasheet NTMFS4H02N.PDF ] | |
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